Shugurov K Yu, Mozharov A M, Fedorov V V, Blokhin S A, Neplokh V V, Mukhin I S
Alferov University, Saint-Petersburg, Russia.
Ioffe Institute, Saint-Petersburg, Russia.
Nanotechnology. 2023 Mar 30;34(24). doi: 10.1088/1361-6528/acc4cb.
Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on individual GaN nanowires. The electrical characterization of-curves demonstrated relatively high ideality factor value (about 6-9) in comparison to the planar Au/GaN diodes that can be attributed to the nanowire geometry. The effective barrier height in the studied structures was defined in the range of 0.25-0.4 eV. The small-signal frequency analysis was employed to study the dependency of the scattering parameters in the broad range from 0.1 to 40 GHz. The approximation fitting of the experimental data indicated the record high cutoff frequency of about 165.8 GHz.
氮化镓（GaN）因其突出的材料特性，是高频器件最具前景的材料之一。我们报道了基于单个GaN纳米线的地-信号-地拓扑结构的一系列肖特基二极管的制备与研究。I-V曲线的电学特性表明，与平面金/氮化镓二极管相比，其理想因子值相对较高（约为6-9），这可归因于纳米线的几何形状。所研究结构中的有效势垒高度在0.25-0.4电子伏特范围内。采用小信号频率分析来研究在0.1至40吉赫兹宽范围内散射参数的依赖性。实验数据的近似拟合表明截止频率创纪录地高达约165.8吉赫兹。
