Tipsawat Pannawit, Ilham Sheikh Jawad, Yang Jung In, Kashani Zeinab, Kiani Mehdi, Trolier-McKinstry Susan
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 USA.
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802 USA.
IEEE Open J Ultrason Ferroelectr Freq Control. 2022;2:184-193. doi: 10.1109/ojuffc.2022.3196823. Epub 2022 Aug 5.
Interest in utilizing ultrasound (US) transducers for non-invasive neuromodulation treatment, including for low intensity transcranial focused ultrasound stimulation (tFUS), has grown rapidly. The most widely demonstrated US transducers for tFUS are either bulk piezoelectric transducers or capacitive micromachine transducers (CMUT) which require high voltage excitation to operate. In order to advance the development of the US transducers towards small, portable devices for safe tFUS at large scale, a low voltage array of US transducers with beam focusing and steering capability is of interest. This work presents the design methodology, fabrication, and characterization of 32-element phased array piezoelectric micromachined ultrasound transducers (PMUT) using 1.5 m thick Pb(Zr Ti)O films doped with 2 mol% Nb. The electrode/piezoelectric/electrode stack was deposited on a silicon on insulator (SOI) wafer with a 2 m silicon device layer that serves as the passive elastic layer for bending-mode vibration. The fabricated 32-element PMUT has a central frequency at 1.4 MHz. Ultrasound beam focusing and steering (through beamforming) was demonstrated where the array was driven with 14.6 V square unipolar pulses. The PMUT generated a maximum peak-to-peak focused acoustic pressure output of 0.44 MPa at a focal distance of 20 mm with a 9.2 mm and 1 mm axial and lateral resolution, respectively. The maximum pressure is equivalent to a spatial-peak pulse-average intensity of 1.29 W/cm, which is suitable for tFUS application.
利用超声(US)换能器进行非侵入性神经调节治疗,包括低强度经颅聚焦超声刺激(tFUS)的研究兴趣迅速增长。用于tFUS的最广泛展示的超声换能器是体压电换能器或电容式微机械换能器(CMUT),它们需要高电压激励才能工作。为了推动超声换能器向用于大规模安全tFUS的小型便携式设备发展,具有波束聚焦和转向能力的低电压超声换能器阵列备受关注。这项工作展示了使用掺杂2 mol% Nb的1.5 m厚Pb(Zr Ti)O薄膜的32元相控阵压电微机械超声换能器(PMUT)的设计方法、制造和表征。电极/压电体/电极叠层沉积在具有2 m硅器件层的绝缘体上硅(SOI)晶圆上,该硅器件层用作弯曲模式振动的无源弹性层。制造的32元PMUT的中心频率为1.4 MHz。通过对阵列施加14.6 V单极方波脉冲,展示了超声束聚焦和转向(通过波束形成)。PMUT在20 mm焦距处产生的最大峰峰值聚焦声压输出为0.44 MPa,轴向和横向分辨率分别为9.2 mm和1 mm。最大压力相当于1.29 W/cm的空间峰值脉冲平均强度,适用于tFUS应用。