Yang Linxiang, Zhang Shuai, Xu Bo, Jiang Jiangyuan, Cai Bo, Lv Xinyi, Zou Yousheng, Fan Zhiyong, Yang Heesun, Zeng Haibo
MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
State Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China.
Nano Lett. 2023 Apr 12;23(7):2443-2453. doi: 10.1021/acs.nanolett.2c03138. Epub 2023 Mar 25.
Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I-III-VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I-III-VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I-III-VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.
量子点（QDs）由于其出色的发光效率和高色纯度，是未来柔性超高清显示、光学信息网络和生物成像技术中重要的前沿发光材料。I-III-VI族量子点及其衍生物具有成分依赖的带隙、全可见光覆盖、高效率、优异的稳定性和无毒等特性，因此有望成为替代传统镉基和铅基量子点的环保材料的理想候选者。特别是，它们的成分灵活性非常有利于精确控制能带结构和微观结构。此外，量子点发光二极管（QLED）在单色显示和白色照明方面展现出优越的前景。本综述总结了I-III-VI族量子点的最新进展及其在发光二极管中的应用。首先，基于其电子能带结构特征阐述了发光机制。其次，聚焦于I-III-VI族量子点的最新进展、制备机制以及光物理性质的调控，总结了其相应的应用进展，特别是在发光二极管中的应用进展。最后，我们对当前的整体现状和挑战提供了观点，提出了促进量子点和量子点发光二极管发展的性能改进策略，指明了该领域的未来方向。
