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揭示三元 I-III-VI 族 CuInS 量子点的形成途径及其对光电化学制氢的影响。

Unveiling Formation Pathways of Ternary I-III-VI CuInS Quantum Dots and Their Effect on Photoelectrochemical Hydrogen Generation.

作者信息

Lee Hyo Cheol, Kim Hwapyong, Kim Kiwook, Lee Kyunghoon, Chung Wookjin, Ha Seung Beom, Kim Minseo, Ahn Eonhyoung, Li Shi, Ji Seunghyun, Lee Gyudong, Ma Hyeonjong, Lim Sung Jun, Choi Hongsoo, Kim Jae-Yup, Ahn Hyungju, In Su-Il, Yang Jiwoong

机构信息

Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.

Department of Chemistry, Hong Kong University of Science and Technology (HKUST), Kowloon, Hong Kong SAR, 999077, Hong Kong.

出版信息

Adv Sci (Weinh). 2025 Aug;12(31):e00829. doi: 10.1002/advs.202500829. Epub 2025 May 28.

Abstract

Understanding the formation mechanisms of semiconductor nanocrystal quantum dots (QDs) is essential for fine-tuning their optical and electrical properties. Despite their potential in solar energy conversion, the synthesis processes and resulting properties of ternary I-III-VI QDs remain underexplored due to the complex interplay among their constituent elements. Herein, the formation mechanism of ternary I-III-VI CuInS QDs is investigated, and a direct correlation between their synthesis pathways and photoelectrochemical hydrogen generation performance is established. Two distinct formation pathways governed by the Lewis acid strength of the precursors are revealed. Precursors with weaker Lewis acid strength, such as indium acetate-alkylamine complexes, induce the nucleation of Cu S phases, which subsequently transform into CuInS QDs. Conversely, exemplified by indium iodide-alkylamine complexes, precursors with stronger Lewis acid strength enable the simultaneous incorporation of all elements during nucleation, resulting in the direct formation of CuInS QDs. Notably, QDs synthesized through this direct pathway exhibit significantly improved electrical properties with lower electron trap densities, resulting in outstanding photoelectrochemical hydrogen production with an excellent photocurrent density of 11.3 mA cm at 0.6 V when used as sensitizers in photoanodes. These findings highlight the critical role of formation pathways in tailoring the properties of ternary I-III-VI QDs.

摘要

了解半导体纳米晶体量子点(QDs)的形成机制对于微调其光学和电学性质至关重要。尽管三元I-III-VI族量子点在太阳能转换方面具有潜力,但由于其组成元素之间复杂的相互作用,其三元I-III-VI族量子点的合成过程和所得性质仍未得到充分探索。在此,研究了三元I-III-VI族CuInS量子点的形成机制,并建立了其合成途径与光电化学产氢性能之间的直接关联。揭示了由前驱体的路易斯酸强度控制的两种不同的形成途径。路易斯酸强度较弱的前驱体,如醋酸铟-烷基胺配合物,诱导CuS相的成核,随后转变为CuInS量子点。相反,以碘化铟-烷基胺配合物为例,路易斯酸强度较强的前驱体能够在成核过程中同时掺入所有元素,直接形成CuInS量子点。值得注意的是,通过这种直接途径合成的量子点表现出显著改善的电学性质,具有较低的电子陷阱密度,当用作光阳极中的敏化剂时,在0.6 V下具有11.3 mA cm的优异光电流密度,从而实现出色的光电化学产氢。这些发现突出了形成途径在定制三元I-III-VI族量子点性质方面的关键作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4597/12376712/cf6b4152158b/ADVS-12-e00829-g003.jpg

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