Khelifi W, Coinon C, Berthe M, Troadec D, Patriarche G, Wallart X, Grandidier B, Desplanque L
Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France.
Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France.
Nanotechnology. 2023 Apr 12;34(26). doi: 10.1088/1361-6528/acc810.
The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)substrate and the resistance of InAs/GaSb core-shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.
利用一种无处理方法，借助多探针扫描隧道显微镜研究了通过选择性区域外延生长的面内砷化铟纳米线的纳米级本征电学性质。在超高真空中，使用共线四点探针装置测量了生长在磷化铟（111）衬底上的无氧化物砷化铟纳米线的电阻以及生长在磷化铟（001）衬底上的砷化铟/锑化镓核壳纳米线的电阻。将它们与使用相同方法并采用范德堡几何结构测量的二维电子气参考样品的电阻进行比较以作验证。当砷化铟纳米线完全嵌入锑化镓中时，电导率有显著提高，呈现出接近量子阱对应物的本征面电导率。
