Rahimli Aysel B, Amiraslanov Imamaddin R, Jahangirli Zakir A, Aliyeva Naila H, Boulet Pascal, Record Marie-Christine, Aliev Ziya S
Institute of Physics, Ministry of Science and Education of Azerbaijan, AZ1143 Baku, Azerbaijan.
Nanoresearch Laboratory, Baku State University, AZ1148 Baku, Azerbaijan.
Materials (Basel). 2023 Mar 15;16(6):2368. doi: 10.3390/ma16062368.
A single crystalline layered semiconductor InGaS phase was grown, and by intercalating p-aminopyridine (NH-CHN or p-AP) molecules into this crystal, a new intercalation compound, InGaS·0.5(NH-CHN), was synthesized. Further, by substituting p-AP molecules with p-ethylenediamine (NH-CH-CH-NH or p-EDA) in this intercalation compound, another new intercalated compound-InGaS·0.5(NH-CH-CH-NH) was synthesized. It was found that the single crystallinity of the initial InGaS samples was retained after their intercalation despite a strong deterioration in quality. The thermal peculiarities of both the intercalation and deintercalation of the title crystal were determined. Furthermore, the unit cell parameters of the intercalation compounds were determined from X-ray diffraction data (XRD). It was found that increasing the parameter corresponded to the dimension of the intercalated molecule. In addition to the intercalation phases' experimental characterization, the lattice dynamical properties and the electronic and bonding features of the stoichiometric GaInS were calculated using the Density Functional Theory within the Generalized Gradient Approximations (DFT-GGA). Nine Raman-active modes were observed and identified for this compound. The electronic gap was found to be an indirect one and the topological analysis of the electron density revealed that the interlayer bonding is rather weak, thus enabling the intercalation of organic molecules.
生长出了单晶层状半导体InGaS相,通过将对氨基吡啶(NH₂-C₅H₄N或p-AP)分子插入该晶体中,合成了一种新的插层化合物InGaS·0.5(NH₂-C₅H₄N)。此外,通过在该插层化合物中用乙二胺(NH₂-CH₂-CH₂-NH₂或p-EDA)取代p-AP分子,合成了另一种新的插层化合物——InGaS·0.5(NH₂-CH₂-CH₂-NH₂)。发现初始InGaS样品在插层后尽管质量严重下降,但仍保留了单晶性。测定了该标题晶体插层和脱插层的热特性。此外,根据X射线衍射数据(XRD)确定了插层化合物的晶胞参数。发现增大的参数对应于插层分子的尺寸。除了对插层相进行实验表征外,还使用广义梯度近似下的密度泛函理论(DFT-GGA)计算了化学计量比的GaInS的晶格动力学性质以及电子和键合特征。观察并识别出该化合物有九种拉曼活性模式。发现电子能隙为间接能隙,电子密度的拓扑分析表明层间键相当弱,从而使得有机分子能够进行插层。