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电迁移过程中复杂组件的可靠性研究

The Study of the Reliability of Complex Components during the Electromigration Process.

作者信息

Cui Hao, Tian Wenchao, Zhang Yiming, Chen Zhiqiang

机构信息

School of Electro-Mechanical Engineering, Xidian University, Xi'an 710000, China.

出版信息

Micromachines (Basel). 2023 Feb 21;14(3):499. doi: 10.3390/mi14030499.

Abstract

With the increasing number of inputs and outputs, and the decreasing interconnection spacing, electrical interconnection failures caused by electromigration (EM) have attracted more and more attention. The electromigration reliability and failure mechanism of complex components were studied in this paper. The failure mechanism and reliability of complex components during the electromigration process were studied through the simulation and the experiment, which can overcome the limitation of experimental measurement at a micro-scale. The simulation results indicated that the solder joint has obvious current crowding at the current inlet, which will significantly enhance the electromigration effect. Based on the atomic flux divergence method, the void formation of solder joints can be effectively predicted, and life prediction can be more accurate than Black's equation. Experimental results indicated that the resistance of the daisy chain could be significantly increased with the process of void formation in the solder and corrosion of the leads. Moreover, the growth of intermetallic compounds can be obviously promoted under current stress. The main composition of the intermetallic compounds changes from almost entirely CuSn to CuSn and CuSn; the cracks can be detected at the CuSn layer. Specifically, the mean time to failure is 1065 h under 1.4 A current and 125 °C based on IPC-9701A guidelines.

摘要

随着输入输出数量的增加以及互连间距的减小,由电迁移(EM)引起的电气互连故障受到越来越多的关注。本文研究了复杂组件的电迁移可靠性及失效机制。通过仿真和实验研究了复杂组件在电迁移过程中的失效机制和可靠性,这可以克服微观尺度下实验测量的局限性。仿真结果表明,焊点在电流入口处有明显的电流聚集,这将显著增强电迁移效应。基于原子通量发散法,可以有效地预测焊点的空洞形成,并且寿命预测比布莱克方程更准确。实验结果表明,随着焊点中空洞的形成以及引线的腐蚀过程,菊花链的电阻会显著增加。此外,在电流应力作用下,金属间化合物的生长会明显加快。金属间化合物的主要成分从几乎完全是CuSn变为CuSn和CuSn₂;在CuSn层可以检测到裂纹。具体而言,根据IPC - 9701A标准,在1.4 A电流和125℃条件下,平均失效时间为1065小时。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1385/10051856/1aec3301e986/micromachines-14-00499-g001.jpg

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