Wang Dong, Liu Hongxia, Zhang Hao, Cai Ming, Lin Jinfu
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel). 2023 Mar 17;14(3):672. doi: 10.3390/mi14030672.
In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and holes are induced in an intrinsic silicon film to create the p-source and the n-drain regions, respectively. Device performance is largely independent of the chemical doping profile, potentially freeing it from issues related to abrupt junctions, dopant variability, and solid solubility. An improved ON-state current and I/I ratio have been demonstrated in a 3D-calibrated simulation, and the Fe-ED NSTFET's on-state current has increased significantly. According to our study, Fe-ED can be used in versatile reconfigurable nanoscale transistors as well as highly integrated circuits as an effective doping strategy.
