Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland.
Nat Nanotechnol. 2010 Mar;5(3):225-9. doi: 10.1038/nnano.2010.15. Epub 2010 Feb 21.
All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
所有现有的晶体管都是基于在半导体材料中引入掺杂原子形成半导体结的原理。随着现代器件中结间距降低到 10nm 以下，需要极高的掺杂浓度梯度。由于扩散定律和掺杂原子分布的统计性质，这种结对于半导体工业来说是一个越来越具有挑战性的制造难题。在这里，我们提出并展示了一种新型晶体管，其中没有结，也没有掺杂浓度梯度。这些器件具有完整的 CMOS 功能，并且是使用硅纳米线制造的。与经典晶体管相比，它们具有近乎理想的亚阈值斜率、极低的漏电流以及栅极电压和温度对迁移率的退化较小。
