FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design.

In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel. The overlapping gate and source contact regions create a strong and uniform electric field in the channel. Furthermore, the metal-semiconductor Schottky junction in the intrinsic source region induces the required carriers without the need for doping. This innovative design achieves both a steeper subthreshold swing (SS) and a higher ON-state current (I). Using calibration-based simulations with Sentaurus TCAD, we compare the performance of three newly designed device structures: the conventional Nanosheet Tunnel Field-Effect Transistor (NS-TFET), the Nanosheet Line-tunneling TFET (NS-LTFET), and the proposed FS-iTFET. Simulation results show that, compared to the traditional NS-TFET, the NS-LTFET with its full line-tunneling structure improves the average subthreshold swing (SS) by 19.2%. More significantly, the FS-iTFET, utilizing the Schottky-inductive source, further improves the SS by 49% and achieves a superior I/I ratio. Additionally, we explore the impact of Trap-Assisted Tunneling on the performance of the three different integrations. The FS-iTFET consistently demonstrates superior performance across various metrics, highlighting its potential in advancing tunnel field-effect transistor technology.