National Renewable Energy Laboratory, Golden, CO, 80401, USA.
California Technology Center, First Solar Inc., Santa Clara, CA, 95050, USA.
Small. 2023 Jul;19(28):e2301939. doi: 10.1002/smll.202301939. Epub 2023 Apr 3.
Bifacial CdTe solar cells with greater power density than the monofacial baselines are demonstrated by using a CuGaO rear interface buffer that passivates while reducing sheet resistance and contact resistance. Inserting CuGaO between the CdTe and Au increases mean power density from 18.0 ± 0.5 to 19.8 ± 0.4 mW cm for one sun front illumination. However, coupling CuGaO with a transparent conductive oxide leads to an electrical barrier. Instead, CuGaO is integrated with cracked film lithography (CFL)-patterned metal grids. CFL grid wires are spaced narrowly enough (≈10 µm) to alleviate semiconductor resistance while retaining enough passivation and transmittance for a bifacial power gain: bifacial CuGaO /CFL grids generate 19.1 ± 0.6 mW cm for 1 sun front + 0.08 sun rear illumination and 20.0 ± 0.6 mW cm at 1 sun front + 0.52 sun rear-the highest reported power density at field albedo conditions for a scaled polycrystalline absorber.
通过使用 CuGaO 后界面缓冲层，证明了双面 CdTe 太阳能电池具有比单面基准更高的功率密度，该缓冲层在降低体电阻和接触电阻的同时实现了钝化。在 CdTe 和 Au 之间插入 CuGaO，可将单太阳正面照明的平均功率密度从 18.0±0.5mW/cm 提高到 19.8±0.4mW/cm。然而，将 CuGaO 与透明导电氧化物耦合会导致电势垒。相反，CuGaO 与裂膜光刻（CFL）图案化金属网格集成。CFL 网格线的间距足够窄（≈10μm），可以减轻半导体电阻，同时保持足够的钝化和透光率，以实现双面功率增益：双面 CuGaO/CFL 网格在 1 个太阳正面+0.08 个太阳背面照明下产生 19.1±0.6mW/cm，在 1 个太阳正面+0.52 个太阳背面照明下产生 20.0±0.6mW/cm，这是在规模化多晶吸收体的现场反射率条件下报告的最高功率密度。
