Liu Yan, Lin Binghui, Xie Ying, Soon Bo Woon, Cai Yao, He Jun, Sun Chengliang
IEEE Trans Ultrason Ferroelectr Freq Control. 2023 Oct;70(10):1239-1245. doi: 10.1109/TUFFC.2023.3247902. Epub 2023 Oct 17.
Surface acoustic wave (SAW) resonators based on aluminum nitride (AlN)/scandium-doped AlN (ScAlN) composite thin films with dual reflection structures demonstrate substantial improvement in acoustic performance. In this work, the factors affecting the final electrical performance of SAW are analyzed from the aspects of piezoelectric thin film, device structure design, and fabrication process. AlN/ScAlN composite films can effectively solve the problem of abnormal grains of ScAlN, improve the crystal orientation, and reduce the intrinsic loss and etching defects. The double acoustic reflection structure of the grating and groove reflector can not only reflect the acoustic wave more thoroughly, but also helps to release the film stress. Both structures are beneficial to obtain a higher Q value. The new stack and design results in large Q and figure of merit among SAW devices working at 446.47 MHz on silicon up to 8241 and 18.1, respectively.
基于具有双反射结构的氮化铝(AlN)/钪掺杂氮化铝(ScAlN)复合薄膜的表面声波(SAW)谐振器在声学性能方面有显著提升。在这项工作中,从压电薄膜、器件结构设计和制造工艺等方面分析了影响SAW最终电学性能的因素。AlN/ScAlN复合薄膜能够有效解决ScAlN晶粒异常的问题,改善晶体取向,并降低固有损耗和蚀刻缺陷。光栅和凹槽反射器的双声反射结构不仅能更彻底地反射声波,还有助于释放薄膜应力。这两种结构都有利于获得更高的品质因数(Q值)。这种新的堆叠结构和设计使得在硅衬底上工作于446.47 MHz的SAW器件中,Q值和品质因数分别高达8241和18.1。