基于声子晶体-反射器复合结构的硅基薄膜压电微机电系统谐振器的品质因数增强

Q-Factor Enhancement of Thin-Film Piezoelectric-on-Silicon MEMS Resonator by Phononic Crystal-Reflector Composite Structure.

作者信息

Liu Jiacheng, Workie Temesgen Bailie, Wu Ting, Wu Zhaohui, Gong Keyuan, Bao Jingfu, Hashimoto Ken-Ya

机构信息

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.

Department of Electrical and Electronic Engineering, Chiba University, Chiba 263-8522, Japan.

出版信息

Micromachines (Basel). 2020 Dec 20;11(12):1130. doi: 10.3390/mi11121130.

DOI:10.3390/mi11121130

PMID:33419352

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7767028/

Abstract

Thin-film piezoelectric-on-silicon (TPoS) microelectromechanical (MEMS) resonators are required to have high Q-factor to offer satisfactory results in their application areas, such as oscillator, filter, and sensors. This paper proposed a phononic crystal (PnC)-reflector composite structure to improve the Q factor of TPoS resonators. A one-dimensional phononic crystal is designed and deployed on the tether aiming to suppress the acoustic leakage loss as the acoustic wave with frequency in the range of the PnC is not able to propagate through it, and a reflector is fixed on the anchoring boundaries to reflect the acoustic wave that lefts from the effect of the PnC. Several 10 MHz TPoS resonators are fabricated and tested from which the Q-factor of the proposed 10 MHz TPoS resonator which has PnC-reflector composite structure on the tether and anchoring boundaries achieved offers a loaded Q-factor of 4682 which is about a threefold improvement compared to that of the conventional resonator which is about 1570.

摘要

薄膜硅基压电（TPoS）微机电系统（MEMS）谐振器需要具有高Q因子，以便在其应用领域（如振荡器、滤波器和传感器）中提供令人满意的结果。本文提出了一种声子晶体（PnC）-反射器复合结构来提高TPoS谐振器的Q因子。设计并在系绳上部署了一维声子晶体，旨在抑制声泄漏损耗，因为频率在PnC范围内的声波无法通过它传播，并且在锚固边界上固定了一个反射器，以反射因PnC效应而离开的声波。制造并测试了几个10 MHz的TPoS谐振器，在所提出的在系绳和锚固边界上具有PnC-反射器复合结构的10 MHz TPoS谐振器中，其负载Q因子达到4682，与传统谐振器约1570相比提高了约三倍。