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反常霍尔效应致太赫兹发射的直接证据。

Direct evidence of terahertz emission arising from anomalous Hall effect.

机构信息

Department of Materials Science and Engineering, Uppsala University, Box 35, 751 03, Uppsala, Sweden.

Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.

出版信息

Sci Rep. 2023 Apr 12;13(1):5988. doi: 10.1038/s41598-023-33143-w.

Abstract

A detailed understanding of the different mechanisms being responsible for terahertz (THz) emission in ferromagnetic (FM) materials will aid in designing efficient THz emitters. In this report, we present direct evidence of THz emission from single layer Co[Formula: see text]Fe[Formula: see text]B[Formula: see text] (CoFeB) FM thin films. The dominant mechanism being responsible for the THz emission is the anomalous Hall effect (AHE), which is an effect of a net backflow current in the FM layer created by the spin polarized current reflected at the interfaces of the FM layer. The THz emission from the AHE-based CoFeB emitter is optimized by varying its thickness, orientation, and pump fluence of the laser beam. Results from electrical transport measurements show that skew scattering of charge carriers is responsible for the THz emission in the CoFeB AHE-based THz emitter.

摘要

深入了解导致铁磁(FM)材料太赫兹(THz)发射的不同机制将有助于设计高效的太赫兹发射器。在本报告中,我们提供了单层 Co[Formula: see text]Fe[Formula: see text]B[Formula: see text](CoFeB)铁磁薄膜中太赫兹发射的直接证据。导致太赫兹发射的主要机制是反常霍尔效应(AHE),这是由于在 FM 层界面处反射的自旋极化电流在 FM 层中产生净回流电流的一种效应。通过改变 CoFeB 发射器的厚度、取向和激光束的泵浦强度,可以优化基于 AHE 的 THz 发射。来自电输运测量的结果表明,载流子的斜散射是基于 CoFeB AHE 的 THz 发射器中太赫兹发射的原因。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0442/10097872/7916e5d53a97/41598_2023_33143_Fig1_HTML.jpg

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