Seifert Tom S, Martens Ulrike, Radu Florin, Ribow Mirkow, Berritta Marco, Nádvorník Lukáš, Starke Ronald, Jungwirth Tomas, Wolf Martin, Radu Ilie, Münzenberg Markus, Oppeneer Peter M, Woltersdorf Georg, Kampfrath Tobias
Department of Physics, Freie Universität Berlin, Berlin, 14195, Germany.
Department of Physical Chemistry, Fritz-Haber-Institute of the Max-Planck-Society, Berlin, 14195, Germany.
Adv Mater. 2021 Apr;33(14):e2007398. doi: 10.1002/adma.202007398. Epub 2021 Mar 3.
The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion phenomena at terahertz (THz) frequencies. Here, it is revealed that the AHE remains operative from DC up to 40 THz with a flat frequency response in thin films of three technologically relevant magnetic materials: DyCo , Co Fe , and Gd Fe . The frequency-dependent conductivity-tensor elements σ and σ are measured, and good agreement with DC measurements is found. The experimental findings are fully consistent with ab initio calculations of σ for CoFe and highlight the role of the large Drude scattering rate (≈100 THz) of metal thin films, which smears out any sharp spectral features of the THz AHE. Finally, it is found that the intrinsic contribution to the THz AHE dominates over the extrinsic mechanisms for the Co Fe sample. The results imply that the AHE and related effects such as the spin Hall effect are highly promising ingredients of future THz spintronic devices reliably operating from DC to 40 THz and beyond.
反常霍尔效应(AHE)是一种基本的自旋电子电荷到电荷电流的转换现象,与自旋霍尔效应引起的自旋到电荷电流的转换密切相关。未来的高速自旋电子器件将关键地依赖于太赫兹(THz)频率下的这种转换现象。在此,研究表明在三种具有技术相关性的磁性材料DyCo、CoFe和GdFe的薄膜中,反常霍尔效应从直流到40太赫兹都有效,且具有平坦的频率响应。测量了随频率变化的电导率张量元素σ和σ,发现与直流测量结果吻合良好。实验结果与CoFe的σ的从头算计算完全一致,并突出了金属薄膜的大德鲁德散射率(≈100太赫兹)的作用,该散射率消除了太赫兹反常霍尔效应的任何尖锐光谱特征。最后,发现对于CoFe样品,太赫兹反常霍尔效应的本征贡献超过了非本征机制。这些结果意味着反常霍尔效应以及诸如自旋霍尔效应等相关效应是未来从直流到40太赫兹及更高频率可靠运行的太赫兹自旋电子器件的极具前景的组成部分。