Sun Quanzhen, Tang Jianlong, Zhang Caixia, Li Yaling, Xie Weihao, Deng Hui, Zheng Qiao, Wu Jionghua, Cheng Shuying
College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, China.
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.
Materials (Basel). 2023 Apr 4;16(7):2869. doi: 10.3390/ma16072869.
Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells.
柔性CZTSSe太阳能电池因其元素储量丰富、稳定性高和应用前景广阔而备受关注。然而,缓冲层中镉的高毒性所引发的环境问题限制了柔性CZTSSe太阳能电池的发展。在此,我们开发了一种无镉柔性CZTSSe/ZnO太阳能电池。研究了ZnO薄膜对器件性能的影响。由于去除了CdS层,柔性CZTSSe太阳能电池的光吸收能力得到增强。ZnO缓冲层的最佳厚度以及CZTSSe/ZnO的适当退火温度分别为100 nm和200℃。最终,最优的柔性CZTSSe/ZnO器件实现了5.0%的效率,这是柔性CZTSSe/ZnO太阳能电池的最高效率。系统表征表明,基于最优条件的柔性CZTSSe/ZnO太阳能电池实现了高质量异质结、低缺陷密度和更好的电荷转移能力。这项工作为开发环境友好型和低成本的柔性CZTSSe太阳能电池提供了一种新策略。