Study on Tungsten Metallization and Interfacial Bonding of Silicon Nitride High-Temperature Co-Fired Ceramic Substrates.

For the first time, SiN HTCC has been prepared using W as the metal phase by high-temperature co-firing (1830 °C/600 KPa/2 h) as a potential substrate candidate in electronic applications. It was discovered that the addition of SiN to the W paste has a significant impact on thermal expansion coefficient matching and dissolution wetting. As the SiN content increased from 0 to 27.23 vol%, the adhesion strength of W increased continuously from 2.83 kgf/mm to 7.04 kgf/mm. The interfacial bonding of the SiN ceramic and the conduction layer was discussed. SEM analysis confirmed that the interface between SiN and W exhibited an interlocking structure. TEM, HRTEM and XRD indicated the formation of WC and WSi due to the interface reactions of W with residual carbon and SiN, respectively, which contributed to the reactive wetting and good adhesion strength between the interface. Suitable amounts of SiN powder and great interfacial bonding were the main reasons for the tough interfacial matching between the SiN ceramic and the conduction layer.