Wu Chong-Rong, Chu Tung-Wei, Chen Kuan-Chao, Lin Shih-Yen
Graduate Institute of Electronics Engineering, National Taiwan University; Research Center for Applied Sciences, Academia Sinica.
Research Center for Applied Sciences, Academia Sinica; Graduate Institute of Photonics and Optoelectronics, National Taiwan University.
J Vis Exp. 2017 Nov 28(129):56494. doi: 10.3791/56494.
We have demonstrated that through the sulfurization of transition metal films such as molybdenum (Mo) and tungsten (W), large-area and uniform transition metal dichalcogenides (TMDs) MoS2 and WS2 can be prepared on sapphire substrates. By controlling the metal film thicknesses, good layer number controllability, down to a single layer of TMDs, can be obtained using this growth technique. Based on the results obtained from the Mo film sulfurized under the sulfur deficient condition, there are two mechanisms of (a) planar MoS2 growth and (b) Mo oxide segregation observed during the sulfurization procedure. When the background sulfur is sufficient, planar TMD growth is the dominant growth mechanism, which will result in a uniform MoS2 film after the sulfurization procedure. If the background sulfur is deficient, Mo oxide segregation will be the dominant growth mechanism at the initial stage of the sulfurization procedure. In this case, the sample with Mo oxide clusters covered with few-layer MoS2 will be obtained. After sequential Mo deposition/sulfurization and W deposition/sulfurization procedures, vertical WS2/MoS2 hetero-structures are established using this growth technique. Raman peaks corresponding to WS2 and MoS2, respectively, and the identical layer number of the hetero-structure with the summation of individual 2D materials have confirmed the successful establishment of the vertical 2D crystal hetero-structure. After transferring the WS2/MoS2 film onto a SiO2/Si substrate with pre-patterned source/drain electrodes, a bottom-gate transistor is fabricated. Compared with the transistor with only MoS2 channels, the higher drain currents of the device with the WS2/MoS2 hetero-structure have exhibited that with the introduction of 2D crystal hetero-structures, superior device performance can be obtained. The results have revealed the potential of this growth technique for the practical application of 2D crystals.
我们已经证明,通过对钼(Mo)和钨(W)等过渡金属薄膜进行硫化处理,可以在蓝宝石衬底上制备大面积且均匀的过渡金属二硫属化物(TMDs)MoS2和WS2。通过控制金属薄膜的厚度,使用这种生长技术可以实现良好的层数可控性,直至获得单层TMDs。基于在硫缺乏条件下硫化Mo薄膜所获得的结果,在硫化过程中观察到两种机制:(a)平面MoS2生长和(b)Mo氧化物偏析。当背景硫充足时,平面TMD生长是主要的生长机制,硫化后将得到均匀的MoS2薄膜。如果背景硫不足,在硫化过程的初始阶段,Mo氧化物偏析将成为主要的生长机制。在这种情况下,将获得覆盖有几层MoS2的Mo氧化物簇的样品。经过连续的Mo沉积/硫化和W沉积/硫化过程,使用这种生长技术建立了垂直的WS2/MoS2异质结构。分别对应于WS2和MoS2的拉曼峰以及异质结构的层数与各个二维材料层数之和相同,证实了垂直二维晶体异质结构的成功建立。将WS2/MoS2薄膜转移到具有预图案化源极/漏极电极的SiO2/Si衬底上后,制造了底部栅极晶体管。与仅具有MoS2沟道的晶体管相比,具有WS2/MoS2异质结构的器件具有更高的漏极电流,这表明引入二维晶体异质结构可以获得优异的器件性能。这些结果揭示了这种生长技术在二维晶体实际应用中的潜力。