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基于离子电子逻辑门的设计─从单个聚电解质二极管到集成离子电路。

Designing with Iontronic Logic Gates─From a Single Polyelectrolyte Diode to an Integrated Ionic Circuit.

机构信息

Faculty of Mechanical Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel.

Faculty of Engineering, Bar-Ilan University, Ramat Gan 5290002, Israel.

出版信息

ACS Appl Mater Interfaces. 2023 May 17;15(19):23361-23370. doi: 10.1021/acsami.3c00062. Epub 2023 Apr 17.

Abstract

This article presents the implementation of on-chip iontronic circuits via small-scale integration of multiple ionic logic gates made of bipolar polyelectrolyte diodes. These ionic circuits are analogous to solid-state electronic circuits, with ions as the charge carriers instead of electrons/holes. We experimentally characterize the responses of a single fluidic diode made of a junction of oppositely charged polyelectrolytes (i.e., anion and cation exchange membranes), with a similar underlying mechanism as a solid-state p- and n-type junction. This served to carry out predesigned logical computations in various architectures by integrating multiple diode-based logic gates, where the electrical signal between the integrated gates was transmitted entirely through ions. The findings shed light on the limitations affecting the number of logic gates that can be integrated, the degradation of the electrical signal, their transient response, and the design rules that can improve the performance of iontronic circuits.

摘要

本文通过小型化集成多个由双极聚电解质二极管组成的离子逻辑门,实现了片上离子电子电路。这些离子电路类似于固态电子电路,以离子作为电荷载流子,而不是电子/空穴。我们通过实验表征了由带相反电荷的聚电解质(即阴离子和阳离子交换膜)的结形成的单个流体二极管的响应,其具有与固态 p 型和 n 型结类似的基础机制。通过集成多个基于二极管的逻辑门,我们在各种架构中执行了预先设计的逻辑计算,其中集成门之间的电信号完全通过离子传输。这些发现揭示了影响可集成逻辑门数量、电信号退化、瞬态响应以及可以改善离子电子电路性能的设计规则的限制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad6d/10197067/a7361b7923fa/am3c00062_0001.jpg

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