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几何可扩展离子电子忆阻器:用于神经形态系统的双极聚电解质凝胶

Geometrically Scalable Iontronic Memristors: Employing Bipolar Polyelectrolyte Gels for Neuromorphic Systems.

作者信息

Zhang Zhenyu, Sabbagh Barak, Chen Yunfei, Yossifon Gilad

机构信息

School of Mechanical Engineering, Tel Aviv University, Tel Aviv 6997801, Israel.

Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189, China.

出版信息

ACS Nano. 2024 Jun 11;18(23):15025-15034. doi: 10.1021/acsnano.4c01730. Epub 2024 May 28.

Abstract

Iontronics that are capable of mimicking the functionality of biological systems within an artificial fluidic network have long been pursued for biomedical applications and ion-based intelligence systems. Here, we report on facile and robust realization of iontronic bipolar memristors featuring a three-layer polyelectrolyte gel structure. Significant memristive hysteresis of ion currents was successfully accomplished, and the memory time proved geometrically scalable from 200 to 4000 s. These characteristics were enabled by the ion concentration polarization-induced rectification ratio within the polyelectrolyte gels. The memristors exhibited memory dynamics akin to those observed in unipolar devices, while the bipolar structure notably enabled prolonged memory time and enhanced the ion conductance switching ratio with mesoscale (10-1000 μm) geometry precision. These properties endow the devices with the capability of effective neuromorphic processing with pulse-based input voltage signals. Owing to their simple fabrication process and superior memristive performance, the presented iontronic bipolar memristors are versatile and can be easily integrated into small-scale iontronic circuits, thereby facilitating advanced neuromorphic computing functionalities.

摘要

长期以来,能够在人工流体网络中模拟生物系统功能的离子电子学一直被用于生物医学应用和基于离子的智能系统。在此,我们报告了具有三层聚电解质凝胶结构的离子电子双极忆阻器的简便且稳健的实现方法。成功实现了离子电流的显著忆阻滞后现象,并且记忆时间经证明在几何尺度上可从200秒扩展至4000秒。这些特性是由聚电解质凝胶内离子浓度极化诱导的整流比实现的。忆阻器展现出与单极器件中观察到的类似的记忆动态,而双极结构显著实现了更长的记忆时间,并以中尺度(10 - 1000微米)的几何精度提高了离子电导切换比。这些特性使器件具备利用基于脉冲的输入电压信号进行有效神经形态处理的能力。由于其简单的制造工艺和卓越的忆阻性能,所展示的离子电子双极忆阻器具有通用性,并且能够轻松集成到小规模离子电子电路中,从而促进先进的神经形态计算功能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2ef5/11171754/7136118191d7/nn4c01730_0001.jpg

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