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利用电子显微镜观察硅负极表面/界面形貌演变。

Imaging the Surface/Interface Morphologies Evolution of Silicon Anodes Using / Electron Microscopy.

机构信息

School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui Province 230009, China.

Natural Sciences and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore.

出版信息

ACS Appl Mater Interfaces. 2023 May 3;15(17):20583-20602. doi: 10.1021/acsami.3c00891. Epub 2023 Apr 23.

DOI:10.1021/acsami.3c00891
PMID:37087764
Abstract

Si-based rechargeable lithium-ion batteries (LIBs) have generated interest as silicon has remarkably high theoretical specific capacity. It is projected that LIBs will meet the increasing need for extensive energy storage systems, electric vehicles, and portable electronics with high energy densities. However, the Si-based LIB has a substantial problem due to the volume cycle variations brought on by Si, which result in severe capacity loss. Making Si-based anodes-enabled high-performance LIBs that are easy to utilize requires an understanding of the fading mechanism. Due to its distinct advantage in morphological changes from microscale to nanoscale, even approaching atomic resolution, electron microscopy is one of the most popular methods. Based on electron microscopy characterization, the general comprehension of the fading mechanism and the morphology evolution of Si-based LIBs are debated in this review. The current advancements in compositional and structural interpretation for Si-based LIBs using advanced electron microscopy characterization methods are outlined. The future development trends in pertinent silicon materials characterization methods are also highlighted, along with numerous potential research avenues for Si-based LIBs design and characterization.

摘要

硅基可充锂离子电池(LIB)作为硅具有极高的理论比容量而备受关注。预计 LIB 将满足对高能量密度的储能系统、电动汽车和便携式电子产品日益增长的需求。然而,由于硅带来的体积循环变化,硅基 LIB 存在严重的容量损失问题。为了实现易于使用的基于硅的高性能 LIB,需要了解衰减机制。由于其在从微尺度到纳米尺度,甚至接近原子分辨率的形态变化方面的独特优势,电子显微镜是最受欢迎的方法之一。基于电子显微镜表征,本文综述了基于硅的 LIB 衰减机制和形态演变的普遍理解。概述了使用先进的电子显微镜表征方法对基于硅的 LIB 的组成和结构进行解释的最新进展。还强调了相关硅材料表征方法的未来发展趋势,以及基于硅的 LIB 设计和表征的许多潜在研究途径。

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