Department of Physics, Jamia Millia Islamia (A Central University), New Delhi, India.
Multidisciplinary Centre for Advance Research and Studies (MCARS), Jamia Millia Islamia (A Central University), New Delhi, India.
Nanotechnology. 2023 May 19;34(31). doi: 10.1088/1361-6528/acd1f3.
This work investigates the implication of graphene and CuZnSnS(CZTS) quantum dots (QDs) incorporation in the hematite thin film for its use in a photoelectrochemical cell. The thin film has been prepared by decorating the CZTS QDs over graphene-hematite composite by simple chemical approach. In Comparison to graphene modification and CZTS QDs modification separately over hematite thin film, the combination of both has produced more photocurrent. The photocurrent density obtained for CZTS QDs and graphene modified hematite thin film is 1.82 mA cmat 1.23 V/RHE, which is 1.75 higher than pristine hematite. The presence of CZTS QDs over hematite-graphene composite enhances the absorption properties of composite along with creating the p-n junction heterostructure which aids the transportation of the charge carriers. The thin films have been characterized using x-ray diffractometer, Raman spectroscopy, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy, and diffuse reflectance UV-vis spectroscopy for phase, morphology and optical properties analysis. The enhancement in photoresponse has been justified by Mott-Schottky and transient open circuit potential analysis.
这项工作研究了在氧化铁薄膜中掺入石墨烯和 CuZnSnS(CZTS)量子点(QD)的意义,以期将其用于光电化学电池。该薄膜是通过简单的化学方法在石墨烯-氧化铁复合材料上修饰 CZTS QD 制备的。与单独对氧化铁薄膜进行石墨烯修饰和 CZTS QD 修饰相比,两者的结合产生了更多的光电流。在 1.23 V/RHE 下,CZTS QD 和石墨烯修饰的氧化铁薄膜的光电流密度为 1.82 mA cm2,比原始氧化铁高 1.75 倍。在氧化铁-石墨烯复合材料上存在 CZTS QD 增强了复合材料的吸收特性,并形成了 p-n 结异质结构,有助于载流子的传输。使用 X 射线衍射仪、拉曼光谱、场发射扫描电子显微镜(FESEM)、高分辨率透射电子显微镜和漫反射紫外可见光谱对薄膜进行了相、形貌和光学性质分析。通过 Mott-Schottky 和瞬态开路电位分析来解释光响应增强的原因。