Guo Jiahao, Wang Bingzhe, Lu Di, Wang Ting, Liu Tingting, Wang Rui, Dong Xiyue, Zhou Tong, Zheng Nan, Fu Qiang, Xie Zengqi, Wan Xiangjian, Xing Guichuan, Chen Yongsheng, Liu Yongsheng
The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China.
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China.
Adv Mater. 2023 Jul;35(28):e2212126. doi: 10.1002/adma.202212126. Epub 2023 May 28.
The carrier lifetime is one of the key parameters for perovskite solar cells (PSCs). However, it is still a great challenge to achieve long carrier lifetimes in perovskite films that are comparable with perovskite crystals owning to the large trap density resulting from the unavoidable defects in grain boundaries and surfaces. Here, by regulating the electronic structure with the developed 2-thiopheneformamidinium bromide (ThFABr) combined with the unique film structure of 2D perovskite layer caped 2D/3D polycrystalline perovskite film, an ultralong carrier lifetime exceeding 20 µs and carrier diffusion lengths longer than 6.5 µm are achieved. These excellent properties enable the ThFA-based devices to yield a champion efficiency of 24.69% with a minimum V loss of 0.33 V. The unencapsulated device retains ≈95% of its initial efficiency after 1180 h by max power point (MPP) tracking under continuous light illumination. This work provides important implications for structured 2D/(2D/3D) perovskite films combined with unique FA-based spacers to achieve ultralong carrier lifetime for high-performance PSCs and other optoelectronic applications.
载流子寿命是钙钛矿太阳能电池(PSC)的关键参数之一。然而,由于晶界和表面不可避免的缺陷导致陷阱密度较大,要在钙钛矿薄膜中实现与钙钛矿晶体相当的长载流子寿命仍然是一个巨大的挑战。在此,通过用已开发的2-噻吩甲脒溴化物(ThFABr)调节电子结构,并结合二维钙钛矿层覆盖的二维/三维多晶钙钛矿薄膜的独特薄膜结构,实现了超过20 µs的超长载流子寿命和大于6.5 µm的载流子扩散长度。这些优异的性能使基于ThFA的器件能够产生24.69%的最高效率,最小电压损失为0.33 V。未封装的器件在连续光照下通过最大功率点(MPP)跟踪1180小时后,仍保留其初始效率的约95%。这项工作为结合独特的基于FA的间隔层的结构化二维/(二维/三维)钙钛矿薄膜实现高性能PSC和其他光电器件的超长载流子寿命提供了重要启示。