Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, Cottbus 03046, Germany.
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, Bremen 28359, Germany.
Ultramicroscopy. 2023 Aug;250:113749. doi: 10.1016/j.ultramic.2023.113749. Epub 2023 May 5.
In the present work we investigate the growth of monolayer MoSe on selenium-intercalated graphene on Ru(0001), a model layered heterostructure combining a transition metal dichalcogenide with graphene, using low energy electron microscopy and micro-diffraction. Real-time observation of MoSe on graphene growth reveals the island nucleation dynamics at the nanoscale. Upon annealing, larger islands are formed by sliding and attachment of multiple nanometer-sized MoSe flakes. Local micro-spot angle-resolved photoemission spectroscopy reveals the electronic structure of the heterostructure, indicating that no charge transfer occurs within adjacent layers. The observed behavior is attributed to intercalation of Se at the graphene/Ru(0001) interface. The unperturbed nature of the proposed heterostructure therefore renders it as a model system for investigations of graphene supported TMD nanostructures.
在本工作中，我们使用低能电子显微镜和微衍射研究了单层 MoSe 在 Ru(0001) 上硒插层石墨烯上的生长，Ru(0001) 是一种结合了过渡金属二卤化物和石墨烯的典型层状异质结构。通过实时观察石墨烯上 MoSe 的生长，我们揭示了纳米尺度下的岛状成核动力学。退火后，通过多个纳米级 MoSe 薄片的滑动和附着形成更大的岛。局部微光斑角分辨光电子能谱揭示了异质结构的电子结构，表明相邻层之间没有电荷转移。观察到的行为归因于石墨烯/Ru(0001) 界面处 Se 的插层。因此，这种未被扰乱的异质结构使其成为研究石墨烯支撑 TMD 纳米结构的理想模型体系。
