Caid Messaoud, Rached Youcef, Rached Djamel, Rached Habib
Département de Physique, École Normale Supérieure de Bou Saâda, Bou Saâda, 28001, Algérie.
Laboratoire de Mathématiques et Physique Appliquées, École Normale Supérieure de Bou Saâda, Bou Saâda, 28001, Algérie.
J Mol Model. 2023 May 16;29(6):178. doi: 10.1007/s00894-023-05588-3.
In this study, we predict the stability, elastic, electronic and optical properties of double perovskite (DP) CsCuIrF. The detailed investigation of electronic structure and optical properties to find the suitability of DP CsCuIrF for device applications. From the structural optimization results, the stability of DP (CsCuIrF) is in cubic order and belongs to the Fm-3 m space group (#225) with a nonmagnetic (NM) state. Additionally, the elastic results show that this DP is mechanically stable in a cubic and ductile manner. Further, we explain in detail the semiconducting nature of the proposed DP with the help of electronic structure and density of states (DOS). The electronic band gap of DP CsCuIrF is 0.72 eV (L-X). The optical part discussion, like the dielectric function ε, reflectivity R, refractive index n, absorption coefficient α and optical conductivity σ up to 13.00 eV. The studied compound is explored as a potential candidate for optoelectronic applications.
The density functional theory (DFT) within generalized gradient approximation (GGA) scheme of Perdew, Burke and Ernzerhof (PBE) as implemented in Wien2k computational code is utilized to achieve stable structure, elastic, electronic and optical properties of this material. The dynamic stability of this material was studied using the finite displacement method implemented in the CASTEP computational code. The elastic results have been computed by the IRelast package implemented in the Wien2k computational code.
在本研究中,我们预测了双钙钛矿(DP)CsCuIrF的稳定性、弹性、电子和光学性质。对电子结构和光学性质进行详细研究,以确定DP CsCuIrF在器件应用中的适用性。从结构优化结果来看,DP(CsCuIrF)的稳定性呈立方晶系,属于Fm-3 m空间群(#225),处于非磁性(NM)状态。此外,弹性结果表明该DP在立方晶系中具有机械稳定性且呈延展性。进一步地,我们借助电子结构和态密度(DOS)详细解释了所提出的DP的半导体性质。DP CsCuIrF的电子带隙为0.72 eV(L-X)。光学部分讨论了介电函数ε、反射率R、折射率n、吸收系数α和高达13.00 eV的光导率σ。所研究的化合物被探索作为光电子应用的潜在候选材料。
利用Wien2k计算代码中实现的Perdew、Burke和Ernzerhof(PBE)广义梯度近似(GGA)方案内的密度泛函理论(DFT)来获得该材料的稳定结构、弹性、电子和光学性质。使用CASTEP计算代码中实现的有限位移方法研究了该材料的动态稳定性。弹性结果由Wien2k计算代码中实现的IRelast软件包计算得出。