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宽带隙半导体双钙钛矿BaInTaO的电子结构、光学、弹性、力学、热力学和热电性质研究

Investigation on the electronic structure, optical, elastic, mechanical, thermodynamic and thermoelectric properties of wide band gap semiconductor double perovskite BaInTaO.

作者信息

Dar Sajad Ahmad, Sharma Ramesh, Srivastava Vipul, Sakalle Umesh Kumar

机构信息

Department of Physics, Govt. Motilal Vigyan Mahavidyalaya College Bhopal-462008 Madhya Pradesh State India

Department of Applied Science, Feroze Gandhi Institute of Engineering and Technology Raebareli-229001 Uttar Pradesh State India.

出版信息

RSC Adv. 2019 Mar 26;9(17):9522-9532. doi: 10.1039/c9ra00313d. eCollection 2019 Mar 22.

Abstract

In the present paper, double perovskite BaInTaO was investigated in terms of its structural, electronic, optical, elastic, mechanical, thermodynamic and thermoelectric properties using density-functional theory (DFT). The generalized gradient approximation (GGA) in the scheme of Perdew, Burke and Ernzerhof (PBE) and the modified Becke-Johnson (mBJ) potential were employed for the exchange-correlation potential. The computed lattice constant was found to be in agreement with the available experimental and theoretical results. The electronic profile shows a semiconducting nature. Further analysis of the complex dielectric constant (), refractive index (), reflectivity (), absorption coefficient (), optical conductivity () and energy loss function were also reported with the incident photon energy. The elastic constants were also calculated and used to determine mechanical properties like Young's modulus (), the shear modulus (), Poisson's ratio () and the anisotropic factor (). The electrical conductivity (/) and Seebeck coefficient () also demonstrated the semiconducting nature of the compound with electrons as the majority carriers. The value of the power factor was calculated to be 1.20 × 10 W K m s at 1000 K. From thermodynamic investigations, the heat capacity and Grüneisen parameter were also predicted.

摘要

在本文中,利用密度泛函理论(DFT)对双钙钛矿BaInTaO的结构、电子、光学、弹性、力学、热力学和热电性质进行了研究。采用Perdew、Burke和Ernzerhof(PBE)方案中的广义梯度近似(GGA)以及修正的Becke-Johnson(mBJ)势作为交换关联势。计算得到的晶格常数与现有的实验和理论结果一致。电子分布显示出半导体性质。还报道了随入射光子能量对复介电常数()、折射率()、反射率()、吸收系数()、光导率()和能量损失函数的进一步分析。还计算了弹性常数,并用于确定诸如杨氏模量()、剪切模量()、泊松比()和各向异性因子等力学性质。电导率(/)和塞贝克系数()也证明了该化合物以电子作为多数载流子的半导体性质。在1000 K时,功率因子的值计算为1.20×10 W K m s。通过热力学研究,还预测了热容和格林艾森参数。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b3dd/9062195/aab98ccfca28/c9ra00313d-f1.jpg

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