Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
CICECO─Aveiro Institute of Materials, Department of Chemistry, University of Aveiro, 3810-193 Aveiro, Portugal.
ACS Appl Mater Interfaces. 2023 May 31;15(21):25693-25703. doi: 10.1021/acsami.3c01971. Epub 2023 May 16.
2D monoelemental materials, particularly germanene and silicene (the single layer of germanium and silicon), which are the base materials for modern electronic devices demonstrated tremendous attraction for their 2D layer structure along with the tuneable electronics and optical band gap. The major shortcoming of synthesized thermodynamically very unstable layered germanene and silicene with their inclination toward oxidation was overcome by topochemical deintercalation of a Zintl phase (CaGe, CaGeSi, and CaGeSi) in a protic environment. The exfoliated Ge-H, GeSiH, and GeSiH were successfully synthesized and employed as the active layer for photoelectrochemical photodetectors, which showed broad response (420-940 nm), unprecedented responsivity, and detectivity on the order of 168 μA W and 3.45 × 10 cm Hz W, respectively. The sensing capability of exfoliated germanane and silicane composites was explored using electrochemical impedance spectroscopy with ultrafast response and recovery time of less than 1 s. These positive findings serve as the application of exfoliated germanene and silicene composites and can pave a new path to practical applications in efficient future devices.
二维单元素材料,特别是锗烯和硅烯(单层锗和硅),它们是现代电子设备的基础材料,具有二维层状结构以及可调谐的电子和光学带隙,具有巨大的吸引力。通过在质子环境中进行 Zintl 相(CaGe、CaGeSi 和 CaGeSi)的拓扑脱插,克服了合成热力学极不稳定的层状锗烯和硅烯倾向于氧化的主要缺点。成功合成了剥离的 Ge-H、GeSiH 和 GeSiH,并将其用作光电器件的活性层,其光电探测器具有宽响应(420-940nm)、前所未有的响应率和探测率,分别为 168μA W 和 3.45×10 cm Hz W。通过电化学阻抗谱研究了剥离的锗烷和硅烷复合材料的传感性能,其响应和恢复时间均小于 1 秒。这些积极的发现为剥离的锗烯和硅烯复合材料的应用提供了依据,并为未来高效器件的实际应用铺平了道路。