Low-Power and Ultra-Thin MoS Photodetectors on Glass.

Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal-organic chemical vapor deposition growth of atomically thin MoS on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-, and ultra-thin (∼20 nm) AlO as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS photodetectors on glass.