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强脉冲光热处理Pb(Zr,Ti)O/金属玻璃异质结构薄膜,实现超过20 V cm⁻¹ Oe⁻¹的极端磁电耦合。

Intense Pulsed Light Thermal Treatment of Pb(Zr,Ti)O /Metglas Heterostructured Films Resulting in Extreme Magnetoelectric Coupling of over 20 V cm  Oe.

作者信息

Palneedi Haribabu, Patil Deepak Rajaram, Priya Shashank, Woo Kyoohee, Ye Jiwon, Woo Yu Mi, Hwang Yun Sik, Hwang Geon-Tae, Park Jung Hwan, Ryu Jungho

机构信息

Materials Research Institute/Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA.

School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 38541, South Korea.

出版信息

Adv Mater. 2023 Aug;35(32):e2303553. doi: 10.1002/adma.202303553. Epub 2023 Jun 29.

Abstract

Magnetoelectric (ME) film composites consisting of piezoelectric and magnetostrictive materials are promising candidates for application in magnetic field sensors, energy harvesters, and ME antennas. Conventionally, high-temperature annealing is required to crystallize piezoelectric films, restricting the use of heat-sensitive magnetostrictive substrates that enhance ME coupling. Herein, a synergetic approach is demonstrated for fabricating ME film composites that combines aerosol deposition and instantaneous thermal treatment based on intense pulsed light (IPL) radiation to form piezoelectric Pb(Zr,Ti)O (PZT) thick films on an amorphous Metglas substrate. IPL rapidly anneals PZT films within a few milliseconds without damaging the underlying Metglas. To optimize the IPL irradiation conditions, the temperature distribution inside the PZT/Metglas film is determined using transient photothermal computational simulation. The PZT/Metglas films are annealed using different IPL pulse durations to determine the structure-property relationship. IPL treatment results in an enhanced crystallinity of the PZT, thus improving the dielectric, piezoelectric, and ME properties of the composite films. An ultrahigh off-resonance ME coupling (≈20 V cm  Oe ) is obtained for the PZT/Metglas film that is IPL annealed at a pulse width of 0.75 ms (an order of magnitude higher than that reported for other ME films), confirming the potential for next-generation, miniaturized, and high-performance ME devices.

摘要

由压电材料和磁致伸缩材料组成的磁电(ME)薄膜复合材料是磁场传感器、能量收集器和ME天线应用的有前途的候选材料。传统上,需要高温退火使压电薄膜结晶,这限制了使用增强ME耦合的热敏磁致伸缩衬底。在此,展示了一种协同方法来制造ME薄膜复合材料,该方法结合了气溶胶沉积和基于强脉冲光(IPL)辐射的瞬时热处理,以在非晶态Metglas衬底上形成压电Pb(Zr,Ti)O(PZT)厚膜。IPL在几毫秒内快速退火PZT薄膜,而不会损坏下面的Metglas。为了优化IPL辐照条件,使用瞬态光热计算模拟确定PZT/Metglas薄膜内部的温度分布。使用不同的IPL脉冲持续时间对PZT/Metglas薄膜进行退火,以确定结构-性能关系。IPL处理导致PZT的结晶度提高,从而改善了复合薄膜的介电、压电和ME性能。对于在0.75 ms脉冲宽度下进行IPL退火的PZT/Metglas薄膜,获得了超高的非共振ME耦合(≈20 V cm Oe)(比其他ME薄膜报道的值高一个数量级),证实了下一代小型化高性能ME器件的潜力。

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