Lee Jinho, Park Minsu, Song Young Geun, Cho Donghwi, Lee Kwangjae, Shim Young-Seok, Jeon Seokwoo
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea
Querrey Simpson Institute for Bioelectronics, Northwestern University Evanston IL 60208 USA.
Nanoscale Adv. 2023 Apr 28;5(10):2767-2775. doi: 10.1039/d2na00925k. eCollection 2023 May 16.
NO is a major air pollutant that should be monitored due to its harmful effects on the environment and human health. Semiconducting metal oxide-based gas sensors have been widely explored owing to their superior sensitivity towards NO, but their high operating temperature (>200 °C) and low selectivity still limit their practical use in sensor devices. In this study, we decorated graphene quantum dots (GQDs) with discrete band gaps onto tin oxide nanodomes (GQD@SnO nanodomes), enabling room temperature (RT) sensing towards 5 ppm NO gas with a noticeable response ((/) - 1 = 4.8), which cannot be matched using pristine SnO nanodomes. In addition, the GQD@SnO nanodome based gas sensor shows an extremely low detection limit of 1.1 ppb and high selectivity compared to other pollutant gases (HS, CO, CH, NH, and CHCOCH). The oxygen functional groups in GQDs specifically enhance NO accessibility by increasing the adsorption energy. Strong electron transfer from SnO to GQDs widens the electron depletion layer at SnO, thereby improving the gas response over a broad temperature range (RT-150 °C). This result provides a basic perspective for utilizing zero-dimensional GQDs in high-performance gas sensors operating over a wide range of temperatures.
一氧化氮是一种主要的空气污染物,因其对环境和人类健康的有害影响而应受到监测。基于半导体金属氧化物的气体传感器因其对一氧化氮具有卓越的灵敏度而得到广泛研究,但其高工作温度(>200°C)和低选择性仍然限制了它们在传感设备中的实际应用。在本研究中,我们将具有离散带隙的石墨烯量子点(GQDs)修饰在氧化锡纳米穹顶(GQD@SnO纳米穹顶)上,实现了对5 ppm一氧化氮气体的室温(RT)传感,具有显著的响应((/) - 1 = 4.8),这是原始的SnO纳米穹顶无法比拟的。此外,基于GQD@SnO纳米穹顶的气体传感器显示出极低的检测限,为1.1 ppb,并且与其他污染气体(HS、CO、CH、NH和CHCOCH)相比具有高选择性。GQDs中的氧官能团通过增加吸附能特异性地提高了一氧化氮的可及性。从SnO到GQDs的强电子转移拓宽了SnO处的电子耗尽层,从而在较宽的温度范围(RT - 150°C)内改善了气体响应。这一结果为在宽温度范围内工作的高性能气体传感器中利用零维GQDs提供了一个基本视角。