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光致抗蚀剂的 Pluronic 表面活性剂抗吸附机制:对其吸附结构的深入了解。

Anti-adsorption Mechanism of Photoresist by Pluronic Surfactants: An Insight into Their Adsorbed Structure.

机构信息

NIKKOL GROUP Nikko Chemicals Co., Ltd., 3-24-3 Hasune, Itabashi, Tokyo 174-0046, Japan.

Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan.

出版信息

Langmuir. 2023 Jun 6;39(22):7876-7883. doi: 10.1021/acs.langmuir.3c00714. Epub 2023 May 20.

DOI:10.1021/acs.langmuir.3c00714
PMID:37209170
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10249399/
Abstract

Photoresist stripping is the final step in the photolithography process that forms fine patterns for electronic devices. Recently, a mixture of ethylene carbonate (EC) and propylene carbonate (PC) has attracted attention as a new stripper based on its eco-friendliness and anti-corrosiveness. However, the EC/PC mixture causes re-adsorption of the photoresist during a process of subsequent water rinsing. In this study, we characterized the adsorption/desorption of the photoresist and a triblock Pluronic surfactant [poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide)] as a blocking agent on an indium tin oxide (ITO) substrate. In addition, we evaluated the dispersion of photoresist particles. The photoresist polymer formed a thin and rigid adsorption layer on an ITO substrate in the EC/PC mixture. When water was injected into the EC/PC mixture and the photoresist solutions, the photoresist polymer aggregated and was then deposited on the substrate. In contrast, the addition of Pluronic surfactant F-68 (PEOPPOPEO) into the EC/PC mixture remarkably decreased the residual amount of the photoresist on the ITO after water injection. This variation was attributed to the PEO blocks of F-68 extended to the solution phase, whereas the PPO blocks of F-68 functioned as anchors for adsorption onto the photoresist. Therefore, the F-68-adsorbed layer prevented interaction between the photoresist particles or the photoresist and the ITO surface, which provides potential for future applications as new stripping agents with high removal performance.

摘要

光致抗蚀剂剥离是光刻工艺的最后一步,用于为电子设备形成精细图案。最近,碳酸乙烯酯(EC)和碳酸丙烯酯(PC)的混合物因其环保和抗腐蚀性而引起了人们的关注,作为一种新型的剥离剂。然而,EC/PC 混合物在随后的水冲洗过程中会导致光致抗蚀剂重新吸附。在这项研究中,我们对光致抗蚀剂和三嵌段 Pluronic 表面活性剂[聚(氧化乙烯)-聚(氧化丙烯)-聚(氧化乙烯)]作为阻塞剂在氧化铟锡(ITO)基底上的吸附/解吸进行了表征。此外,我们还评估了光致抗蚀剂颗粒的分散情况。光致抗蚀剂聚合物在 EC/PC 混合物中的 ITO 基底上形成了一层薄而硬的吸附层。当将水注入 EC/PC 混合物和光致抗蚀剂溶液中时,光致抗蚀剂聚合物聚集并沉积在基底上。相比之下,在 EC/PC 混合物中添加 Pluronic 表面活性剂 F-68(PEOPPOPEO)显著减少了水注入后 ITO 上残留的光致抗蚀剂量。这种变化归因于 F-68 的 PEO 链段扩展到溶液相中,而 F-68 的 PPO 链段则作为吸附到光致抗蚀剂上的锚点。因此,F-68 吸附层阻止了光致抗蚀剂颗粒或光致抗蚀剂与 ITO 表面之间的相互作用,这为未来作为具有高去除性能的新型剥离剂的应用提供了潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/fa51d7907b15/la3c00714_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/82ec06075514/la3c00714_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/681299ed1c07/la3c00714_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/5fe9f4c27a14/la3c00714_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/4742b5ea30f1/la3c00714_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/49f11bf04fd0/la3c00714_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/2e00fce4fae5/la3c00714_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/fa51d7907b15/la3c00714_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/82ec06075514/la3c00714_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/681299ed1c07/la3c00714_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/5fe9f4c27a14/la3c00714_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/4742b5ea30f1/la3c00714_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/49f11bf04fd0/la3c00714_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/2e00fce4fae5/la3c00714_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0f5c/10249399/fa51d7907b15/la3c00714_0008.jpg

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