Fujitani Kaito, Takenaka Kento, Takahara Koji, Sumida Hirosuke, Yamaguchi Akinobu, Utsumi Yuichi, Suzuki Satoru
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigori, Ako, Hyogo 678-1205, Japan.
Graduate School of Science, University of Hyogo, 3-2-1 Koto, Kamigori, Ako, Hyogo 678-1297, Japan.
Heliyon. 2023 Apr 29;9(5):e15794. doi: 10.1016/j.heliyon.2023.e15794. eCollection 2023 May.
We investigated the mechanism of polytetrafluoroethylene (PTFE) chain scission through hard X-ray photoelectron spectroscopy at room temperature, 200 °C, and 230 °C. The -C bonds in the main chain and -F bonds in the side chains were broken, and F desorption from the PTFE surface was observed at room temperature. The formation of CF was also observed from the recombination of broken -C bonds in the main chain and detached F, which were not induced by soft X-rays. In contrast, when the PTFE substrate was irradiated with hard X-rays at 200 °C, the CF intensity initially produced by recombination reactions decreased with irradiation time, and the photoelectron spectrum retained the original PTFE spectrum. Under these conditions, the F1s/C1s intensity ratio did not change with the irradiation time; hence, the fragment containing only CF, the chemical composition of the original PTFE, was desorbed. When the substrate temperature was 230 °C, the CF intensity increased in relation to that at 200 °C. This result indicated that the formation of CF via recombination reactions of broken molecular chains is enhanced by thermal assistance. These phenomena were considered to be based on the balance between recombination and desorption by photochemical and pyrochemical reactions. These results will lead to a better understanding of the use of X-ray-irradiated fluorine resins and PTFE in potential space-based environments. This study will also promote the improvement of PTFE microfabrication methods and thin-film formation using synchrotron radiation.
我们通过硬X射线光电子能谱研究了聚四氟乙烯(PTFE)在室温、200°C和230°C下的断链机制。主链中的-C键和侧链中的-F键发生断裂,在室温下观察到F从PTFE表面解吸。还观察到主链中断裂的-C键与脱离的F重新结合形成CF,这不是由软X射线诱导的。相比之下,当PTFE基板在200°C下用硬X射线照射时,由重组反应最初产生的CF强度随照射时间降低,光电子能谱保留了原始PTFE光谱。在这些条件下,F1s/C1s强度比不随照射时间变化;因此,仅含有CF的片段,即原始PTFE的化学成分,被解吸。当基板温度为230°C时,CF强度相对于200°C时增加。该结果表明,通过断链分子链的重组反应形成CF受到热辅助的增强。这些现象被认为是基于光化学反应和热化学反应在重组和解吸之间的平衡。这些结果将有助于更好地理解在潜在的天基环境中使用X射线辐照的氟树脂和PTFE。本研究还将促进PTFE微加工方法的改进以及使用同步辐射形成薄膜。