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聚合物共混物的可逆塑性变形作为实现可拉伸有机晶体管的一种手段

Reversible Plastic Deformation of Polymer Blends as a Means to Achieve Stretchable Organic Transistors.

作者信息

Sun Tianlei, Scott Joshua I, Wang Ming, Kline R Joseph, Bazan Guillermo, O'Connor Brendan T

机构信息

Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC 27695, USA.

Center for Polymers and Organic Solids, University of California-Santa Barbara, Santa Barbara, CA 93106, USA.

出版信息

Adv Electron Mater. 2017 Jan;3(1). doi: 10.1002/aelm.201600388. Epub 2016 Dec 12.

Abstract

Intrinsically stretchable semiconductors will facilitate the realization of seamlessly integrated stretchable electronics. However, to date demonstrations of intrinsically stretchable semiconductors have been limited. In this study, a new approach to achieve intrinsically stretchable semiconductors is introduced by blending a rigid high-performance donor-acceptor polymer semiconductor poly[4(4,4dihexadecyl4Hcyclopenta [1,2b:5,4b' ] dithiopen2yl) alt [1,2,5] thiadiazolo [3,4c] pyridine] (PCDTPT) with a ductile polymer semiconductor poly(3hexylthiophene) (P3HT). Under large tensile strains of up to 75%, the polymers are shown to orient in the direction of strain, and when the strain is reduced, the polymers reversibly deform. During cyclic strain, the local packing order of the polymers is shown to be remarkably stable. The saturated field effect charge mobility is shown to be consistently above 0.04 cm Vs for up to 100 strain cycles with strain ranging from 10% to 75% when the film is printed onto a rigid test bed. At the 75% strain state, the charge mobility is consistently above 0.15 cm Vs. Ultimately, the polymer blend process introduced here results in an excellent combination of device performance and stretchability providing an effective approach to achieve intrinsically stretchable semiconductors.

摘要

本征可拉伸半导体将推动无缝集成可拉伸电子产品的实现。然而,迄今为止,本征可拉伸半导体的实例仍然有限。在本研究中,通过将刚性高性能供体-受体聚合物半导体聚4-(4,4-二己基-4H-环戊并[1,2-b:5,4-b']二噻吩-2-基)-alt-[1,2,5]噻二唑并[3,4-c]吡啶与韧性聚合物半导体聚(3-己基噻吩)(P3HT)共混,引入了一种实现本征可拉伸半导体的新方法。在高达75%的大拉伸应变下,聚合物显示出沿应变方向取向,当应变降低时,聚合物可逆变形。在循环应变过程中,聚合物的局部堆积顺序显示出显著的稳定性。当将该薄膜印刷到刚性测试台上时,在10%至75%的应变范围内进行高达100次应变循环时,饱和场效应电荷迁移率始终高于0.04 cm² V⁻¹ s⁻¹。在75%应变状态下,电荷迁移率始终高于0.15 cm² V⁻¹ s⁻¹。最终,本文介绍的聚合物共混工艺实现了器件性能和可拉伸性的出色结合,为实现本征可拉伸半导体提供了一种有效方法。

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