Lee Song, Lee Jeong-In, Kim Chang-Hyun, Kwon Jin-Hyuk, Lee Jonghee, Boampong Amos Amoako, Kim Min-Hoi
Department of Creative Convergence Engineering, Hanbat National University, Daejeon, South Korea.
School of Electronic Engineering, Gachon University, Seongnam, South Korea.
Sci Technol Adv Mater. 2023 May 23;24(1):2212112. doi: 10.1080/14686996.2023.2212112. eCollection 2023.
The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the ZAA decreases. The RT-dried ZAA for the -type organic-based CTM shows the widest threshold voltage shift (∆V ≈ 80 V), four distinct for a multi-bit memory operation and retained memory currents for 10 s with high memory on- and off-current ratio (I/I ≈ 5Ⅹ10). The -type oxide-based CTM (Ox-CTM) also shows a ∆ of 14 V and retained memory currents for 10 s with / ≈ 10. The inability of the Ox-CTM to be electrically erasable is well explained with simulated electrical potential contour maps. It is deduced that, irrespective of the varied solution-processed semiconductor used, the RT-dried organic ZAA as CTL shows the best memory functionality in the fabricated CTMs. This implies that the high carbon double bonds in the low-temperature processed ZAA CTL are very useful for low-cost multi-bit CTMs in flexible electronics.
溶液处理的乙酰丙酮锆（ZAA）用于溶液处理的非易失性电荷俘获存储器（CTM）晶体管的电荷俘获特性得到了证明。在环境气氛中将ZAA的退火温度从室温（RT）提高到300°C，ZAA中的碳双键会减少。用于n型有机基CTM的室温干燥ZAA显示出最宽的阈值电压偏移（∆V≈80 V），具有四个不同的电平用于多位存储操作，并且存储电流可保持10 s，具有高的存储开/关电流比（Ion/Ioff≈5×10）。p型氧化物基CTM（Ox-CTM）也显示出14 V的∆V，并且存储电流可保持10 s，Ion/Ioff≈10。通过模拟电势等高线图很好地解释了Ox-CTM无法进行电擦除的原因。据推断，无论使用何种不同的溶液处理半导体，室温干燥的有机ZAA作为电荷俘获层（CTL）在制造的CTM中都显示出最佳的存储功能。这意味着在低温处理的ZAA CTL中的高碳双键对于柔性电子器件中的低成本多位CTM非常有用。
