Institute of Physics - Center for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019, Katowice, Poland.
Department of Industrial Informatics, Faculty of Materials Science, Joint Doctorate School, Silesian University of Technology, Krasinskiego 8, 40-019, Katowice, Poland.
Sci Rep. 2023 May 31;13(1):8800. doi: 10.1038/s41598-023-35899-7.
The nanorods of bismuth sulfoiodide (BiSI) were synthesized at relatively low temperature (393 K) through a wet chemical method. The crystalline one-dimensional (1D) structure of the BiSI nanorods was confirmed using high resolution transmission microscopy (HRTEM). The morphology and chemical composition of the material were examined by applying scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS), respectively. The average diameter of 126(3) nm and length of 1.9(1) µm of the BiSI nanorods were determined. X-ray diffraction (XRD) revealed that prepared material consists of a major orthorhombic BiSI phase (87%) and a minor amount of hexagonal BiSI phase (13%) with no presence of other residual phases. The direct energy band gap of 1.67(1) eV was determined for BiSI film using diffuse reflectance spectroscopy (DRS). Two types of photodetectors were constructed from BiSI nanorods. The first one was traditional photoconductive device based on BiSI film on stiff glass substrate equipped with Au electrodes. An influence of light intensity on photocurrent response to monochromatic light (λ = 488 nm) illumination was studied at a constant bias voltage. The novel flexible photo-chargeable device was the second type of prepared photodetectors. It consisted of BiSI film and gel electrolyte layer sandwiched between polyethylene terephthalate (PET) substrates coated with indium tin oxide (ITO) electrodes. The flexible self-powered BiSI photodetector exhibited open-circuit photovoltage of 68 mV and short-circuit photocurrent density of 0.11 nA/cm under light illumination with intensity of 0.127 W/cm. These results confirmed high potential of BiSI nanorods for use in self-powered photodetectors and photo-chargeable capacitors.
通过湿化学法在相对较低的温度（393 K）下合成了铋磺化碘（BiSI）纳米棒。高分辨率透射显微镜（HRTEM）证实了 BiSI 纳米棒的一维（1D）晶体结构。通过应用扫描电子显微镜（SEM）和能量色散 X 射线光谱（EDS）分别检查了材料的形貌和化学成分。确定了 BiSI 纳米棒的平均直径为 126（3）nm，长度为 1.9（1）μm。X 射线衍射（XRD）表明，所制备的材料由主要的正交相 BiSI 相（87%）和少量的六方相 BiSI 相（13%）组成，没有其他残留相。使用漫反射光谱（DRS）确定了 BiSI 薄膜的直接能带隙为 1.67（1）eV。基于 BiSI 薄膜在硬玻璃衬底上的 Au 电极制备了两种类型的光电探测器。第一种是传统的光电导器件，它基于硬玻璃衬底上的 BiSI 薄膜，配备了 Au 电极。在恒定偏压下，研究了光强对单色光（λ=488nm）照射下光电流响应的影响。第二种新型柔性光电可充电器件是制备的光电探测器的第二种类型。它由 BiSI 薄膜和凝胶电解质层组成，夹在涂有铟锡氧化物（ITO）电极的聚对苯二甲酸乙二醇酯（PET）基板之间。在强度为 0.127 W/cm 的光照射下，柔性自供电 BiSI 光电探测器表现出 68 mV 的开路光电压和 0.11 nA/cm 的短路光电流密度。这些结果证实了 BiSI 纳米棒在自供电光电探测器和光电可充电电容器中的应用具有很高的潜力。
