Yu Chol-Jun, Ri Il-Chol, Ri Hak-Myong, Jang Jong-Hyok, Kim Yun-Sim, Jong Un-Gi
Computational Materials Design, Faculty of Materials Science, Kim Il Sung University PO Box 76 Pyongyang Democratic People's Republic of Korea
RSC Adv. 2023 May 30;13(23):16012-16022. doi: 10.1039/d3ra02566g. eCollection 2023 May 22.
All-inorganic halide double perovskites (HDPs) attract significant attention in the field of perovskite solar cells (PSCs) and light-emitting diodes. In this work, we present a first-principles study on structural, elastic, electronic and optical properties of all-inorganic HDPs CsAgBX (B = In, Sb; X = F, Cl, Br, I), aiming at finding the possibility of using them as photoabsorbers for PSCs. Confirming that the cubic perovskite structure can be formed safely thanks to the proper geometric factors, we find that the lattice constants are gradually increased on increasing the atomic number of the halogen atom from F to I, indicating the weakening of Ag-X and B-X interactions. Our calculations reveal that all the perovskite compounds are mechanically stable due to their elastic constants satisfying the stability criteria, whereas only the Cl-based compounds are dynamically stable in the cubic phase by observing their phonon dispersions without soft modes. The electronic band structures are calculated with the Heyd-Scuseria-Ernzerhof hybrid functional, demonstrating that the In (Sb)-based HDPs show direct (indirect) transition of electrons and the band gaps are decreased from 4.94 to 0.06 eV on going from X = F to I. Finally, we investigate the macroscopic dielectric functions, photo-absorption coefficients, reflectivity and exciton properties, predicting that the exciton binding strength becomes weaker on going from F to I.
全无机卤化物双钙钛矿(HDPs)在钙钛矿太阳能电池(PSCs)和发光二极管领域引起了广泛关注。在这项工作中,我们对全无机HDPs CsAgBX(B = In,Sb;X = F,Cl,Br,I)的结构、弹性、电子和光学性质进行了第一性原理研究,旨在寻找将它们用作PSCs光吸收剂的可能性。由于合适的几何因素,证实可以安全地形成立方钙钛矿结构,我们发现随着卤素原子的原子序数从F增加到I,晶格常数逐渐增大,这表明Ag-X和B-X相互作用减弱。我们的计算表明,所有钙钛矿化合物由于其弹性常数满足稳定性标准而具有机械稳定性,而通过观察其无软模的声子色散,只有基于Cl的化合物在立方相中具有动态稳定性。使用Heyd-Scuseria-Ernzerhof杂化泛函计算电子能带结构,结果表明基于In(Sb)的HDPs显示出电子的直接(间接)跃迁,并且当从X = F变为I时,带隙从4.94 eV减小到0.06 eV。最后,我们研究了宏观介电函数、光吸收系数、反射率和激子性质,预测从F到I激子结合强度会变弱。