Hasan Md Mehedi, Sarker Md Amran, Mansur Mohshina Binte, Islam Md Rasidul, Ahmad Sohail
Department of Materials Science & Engineering, Khulna University of Engineering & Technology (KUET), Khulna 9203, Bangladesh.
Department of Electrical and Electronic Engineering, Bangamata Sheikh Fojilatunnesa Mujib Science & Technology University, Jamalpur 2012, Bangladesh.
Heliyon. 2024 Jul 18;10(15):e34824. doi: 10.1016/j.heliyon.2024.e34824. eCollection 2024 Aug 15.
Researchers are now focusing on inorganic halide-based cubic metal perovskites that are not toxic as they strive to commercialize optoelectronic products and solar cells derived from perovskites. This study explores the properties of new lead-free compounds, specifically GaGeX (where X = Cl, Br, and I), by executing first-principles Density Functional Theory (DFT) to analyze their optical, electronic, mechanical, and structural characteristics under pressure. Assessing the reliability of all compounds is done meticulously by applying the criteria of Born stability and calculating the formation energy. As discovered through elastic investigations, these materials showed anisotropic behavior, flexibility, and excellent elastic stability. The electronic band structures, calculated using both HSE06 and GGA-PBE functionals at 0 GPa, reveal fascinating behavior. However, computed band structures with non-zero pressures using GGA-PBE. Here, the conduction band moved to the lower energy when the halide Cl was changed with Br or I. In addition, the application of hydrostatic pressure can lead to tunable band gap properties in all compounds such as from 0.779 eV to 0 eV for GaGeCl, from 0.462 eV to 0 eV for GaGeBr and from 0.330 eV to 0 eV for GaGeI, resulting transformation from semiconductor to metallic. Understanding the origins of bandgap changes can be illuminated by examining the partial and total density of states (PDOS & TDOS). When subjected to pressure, all the studied compounds showed an impactful increase in absorption coefficients and displayed exceptional optical conductivity in both the visible and UV zones. Yet, GaGeCl is a more effective UV absorber because it absorbs light more strongly in the UV area. Moreover, GaGeI stands out among the compounds examined due to its impressive visible absorption and optical conductivity, which remain consistent under varying pressure conditions. Besides, GaGeI exhibits higher reflectivity when subjected to pressure making them suitable for UV shielding applications. At last, these metal cubic halide perovskites without lead present promising opportunities for advancing optoelectronic technologies. With their tunable properties and favorable optical characteristics, these materials are highly sought after for their potential in solar cells, multi-junctional solar cells, and different optoelectronic functions.
研究人员目前正专注于无毒的无机卤化物基立方金属钙钛矿,他们致力于将基于钙钛矿的光电子产品和太阳能电池商业化。本研究通过执行第一性原理密度泛函理论(DFT)来探索新型无铅化合物,特别是GaGeX(其中X = Cl、Br和I)在压力下的光学、电子、机械和结构特性。通过应用玻恩稳定性标准并计算形成能,精心评估所有化合物的可靠性。通过弹性研究发现,这些材料表现出各向异性行为、柔韧性和出色的弹性稳定性。在0 GPa下使用HSE06和GGA-PBE泛函计算的电子能带结构显示出迷人的行为。然而,使用GGA-PBE计算非零压力下的能带结构时,当卤化物Cl被Br或I取代时,导带向更低能量移动。此外,静水压力的施加可导致所有化合物的带隙特性可调,例如GaGeCl从0.779 eV变为0 eV,GaGeBr从0.462 eV变为0 eV,GaGeI从0.330 eV变为0 eV,从而导致从半导体向金属的转变。通过检查部分和总态密度(PDOS和TDOS)可以阐明带隙变化的起源。在压力作用下,所有研究的化合物吸收系数都有显著增加,并且在可见光和紫外区域都表现出出色的光导率。然而,GaGeCl是一种更有效的紫外吸收剂,因为它在紫外区域吸收光更强。此外,GaGeI在所研究的化合物中脱颖而出,因为它在可见光吸收和光导率方面令人印象深刻,并且在不同压力条件下保持一致。此外,GaGeI在受压时表现出更高的反射率,使其适用于紫外线屏蔽应用。最后,这些无铅的金属立方卤化物钙钛矿为推进光电子技术提供了有前景的机会。凭借其可调特性和良好的光学特性,这些材料因其在太阳能电池、多结太阳能电池和不同光电子功能方面的潜力而备受追捧。