Department of Electrical Engineering, College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia.
Department of Electrical and Electronic Engineering, Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
Sensors (Basel). 2023 Jun 4;23(11):5332. doi: 10.3390/s23115332.
A novel refractive index-based sensor implemented within a silicon photonic integrated circuit (PIC) is reported. The design is based on a double-directional coupler (DC) integrated with a racetrack-type resonator (RR) to enhance the optical response to changes in the near-surface refractive index via the optical Vernier effect. Although this approach can give rise to an extremely large 'envelope' free spectral range (FSR), we restrict the design geometry to ensure this is within the traditional silicon PIC operating wavelength range of 1400-1700 nm. As a result, the exemplar double DC-assisted RR (DCARR) device demonstrated here, with FSR = 246 nm, has a spectral sensitivity = 5 × 10 nm/RIU.
报道了一种基于折射率的新型传感器，该传感器在硅光子集成电路 (PIC) 中实现。该设计基于双向耦合器 (DC) 与赛道型谐振器 (RR) 的集成，通过光学游标效应增强了对近表面折射率变化的光学响应。虽然这种方法可以产生非常大的“包络”自由光谱范围 (FSR)，但我们限制了设计几何形状以确保其在传统的硅 PIC 工作波长范围 1400-1700nm 内。因此，这里展示的具有 FSR = 246nm 的示例双 DC 辅助 RR (DCARR) 器件，其光谱灵敏度为 = 5 × 10nm/RIU。
