Kwon Yeong Min, Lim Yi Rang, Bae Garam, Song Da Som, Jo Hyeong-Ku, Park Se Yeon, Jang Moonjeong, Yim Soonmin, Myung Sung, Lim Jongsun, Lee Sun Sook, Song Wooseok
Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea.
Small Methods. 2023 Oct;7(10):e2300147. doi: 10.1002/smtd.202300147. Epub 2023 Jun 14.
Despite the encouraging properties and research of 2D MoS , an ongoing issue associated with the oxidative instability remains elusive for practical optoelectronic applications. Thus, in-depth understanding of the oxidation behavior of large-scale and homogeneous 2D MoS is imperative. Here the structural and chemical transformations of large-area MoS multilayers by air-annealing with altered temperature and time via combinatorial spectro-microscopic analyses (Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy) are surveyed. The results gave indications pertaining to temperature- and time-dependent oxidation effects: i) heat-driven elimination of redundant residues, ii) internal strain stimulated by the formation of MoO bonds, iii) deterioration of the MoS crystallinity, iv) layer thinning, and v) morphological transformation from 2D MoS layers to particles. Photoelectrical characterization of the air-annealed MoS is implemented to capture the link between the oxidation behavior of MoS multilayers and their photoelectrical properties. The photocurrent based on MoS air-annealed at 200 °C is assessed to be 4.92 µA, which is 1.73 times higher than that of pristine MoS (2.84 µA). The diminution in the photocurrent of the photodetector based on MoS air-annealed above 300 °C in terms of the structural, chemical, and electrical conversions induced by the oxidation process is further discussed.
尽管二维二硫化钼具有令人鼓舞的特性并开展了相关研究,但对于实际的光电子应用而言,与氧化不稳定性相关的一个持续存在的问题仍然难以捉摸。因此,深入了解大面积且均匀的二维二硫化钼的氧化行为势在必行。在此,通过组合光谱显微镜分析(拉曼光谱、X射线光电子能谱和原子力显微镜),研究了在不同温度和时间下进行空气退火处理时大面积二硫化钼多层膜的结构和化学转变。结果给出了与温度和时间相关的氧化效应的相关指示:i)热驱动去除多余残留物;ii)MoO键形成所激发的内部应变;iii)二硫化钼结晶度的恶化;iv)层变薄;v)从二维二硫化钼层到颗粒的形态转变。对空气退火后的二硫化钼进行光电表征,以捕捉二硫化钼多层膜的氧化行为与其光电性能之间的联系。经评估,在200°C下空气退火的二硫化钼的光电流为4.92 µA,比原始二硫化钼(2.84 µA)高1.73倍。基于氧化过程引起的结构、化学和电学转变,进一步讨论了在300°C以上空气退火的二硫化钼制成的光电探测器光电流的减小情况。