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利用受限空间化学气相沉积法通过氯化钠辅助实现大面积二硫化钼晶体的温度依赖性可控生长。

NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS Crystals Using Confined-Space CVD.

作者信息

Suleman Muhammad, Lee Sohee, Kim Minwook, Nguyen Van Huy, Riaz Muhammad, Nasir Naila, Kumar Sunil, Park Hyun Min, Jung Jongwan, Seo Yongho

机构信息

Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea.

出版信息

ACS Omega. 2022 Aug 22;7(34):30074-30086. doi: 10.1021/acsomega.2c03108. eCollection 2022 Aug 30.

Abstract

Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS in a controlled manner. Herein, we report the large-scale growth of MoS with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS and opens the way for its various optoelectronic and electronic applications.

摘要

由于其半导体性质,大面积化学气相沉积(CVD)生长的二维(2D)二硫化钼(MoS)的可控生长在光电探测器、传感器和光电子学等领域有许多潜在应用。然而,高结晶度MoS的可控、大面积且经济高效的生长仍然是一个挑战。受限空间CVD是一种以可控方式生长高结晶度MoS的非常有前景的方法。在此,我们报道了使用氯化钠作为受限空间CVD的晶种促进剂来大规模生长具有不同形貌的MoS。通过改变晶种促进剂的用量、前驱体比例和生长温度来报道MoS形貌的变化。此外,使用光学显微镜、扫描电子显微镜(SEM)、拉曼光谱、X射线光电子能谱(XPS)、能量色散X射线光谱(EDX)和原子力显微镜(AFM)对生长的MoS的性质进行了分析。CVD生长的MoS的电学性质在制造的场效应晶体管中显示出有前景的性能。这项工作为大面积MoS的生长提供了新的见解,并为其各种光电子和电子应用开辟了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d25/9434612/7ffe9c9a5f57/ao2c03108_0002.jpg

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