Yerojwar R M, Kokode N S, Nandanwar C M, Ingole D K, Nimbarte G R
Department of Physics, Mohasinbhai Zaweri Mahavidyalaya, Desaiganj (Wadsa), Gondwana University, Dist. Gadchiroli-441207, Gadchiroli, Maharashtra, India.
Department of Physics, Nevjabai Hitkarini College, Dist. Chandrapur-441206, Bramhapuri, Maharashtra, India.
J Fluoresc. 2024 Mar;34(2):627-633. doi: 10.1007/s10895-023-03313-0. Epub 2023 Jun 20.
The combustion procedure was used to synthesize BiAlO:Eu phosphors. The XRD and photoluminescence properties are investigations. The XRD patterns consist of an orthorhombic crystal structure. At 395 nm, the maximum excitation intensity was obtained. Following 395 nm excitation, two different emission peaks at 593 and 615 nm were observed. Concentration quenching occurred at 0.5 mol % Eu ions. The CIE coordinates for the BiAlO phosphor with Eu ion doped are 615 nm (x = 0.680, y = 0.319) falling in the red region. According to the photoluminescence results, BiAlO:Eu phosphors might be useful in the fields of near UV-excited w-LEDs.
采用燃烧法合成了BiAlO:Eu荧光粉。对其XRD和光致发光性能进行了研究。XRD图谱由正交晶体结构组成。在395nm处获得了最大激发强度。在395nm激发后，观察到593nm和615nm处的两个不同发射峰。在0.5mol%的Eu离子处发生浓度猝灭。掺杂Eu离子的BiAlO荧光粉的CIE坐标为615nm（x = 0.680，y = 0.319），落在红色区域。根据光致发光结果，BiAlO:Eu荧光粉可能在近紫外激发的白光发光二极管领域有用。
