Huang Junhua, Yang Shaodian, Tang Xin, Yang Leilei, Chen Wenjun, Chen Zibo, Li Xinming, Zeng Zhiping, Tang Zikang, Gui Xuchun
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China.
Department of Physics, Guangxi Minzu University, Nanning, 530006, China.
Adv Mater. 2023 Aug;35(33):e2303737. doi: 10.1002/adma.202303737. Epub 2023 Jul 4.
A high-density neuromorphic computing memristor array based on 2D materials paves the way for next-generation information-processing components and in-memory computing systems. However, the traditional 2D-materials-based memristor devices suffer from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiO /Ti C T film is fabricated by a convenient and energy-efficient solution-processing technique, which realizes high transmittance (≈90%) and oxidation resistance (>30 days). The TiO /Ti C T memristor shows low device-to-device variability, long memory retention and endurance, a high ON/OFF ratio, and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (10 bending cycles) of the TiO /Ti C T memristor are achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high-precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that the TiO /Ti C T artificial synapse array holds promise for future neuromorphic computing applications, and provides excellent high-density neuron circuits for new flexible intelligent electronic equipment.
一种基于二维材料的高密度神经形态计算忆阻器阵列，为下一代信息处理组件和内存计算系统铺平了道路。然而，传统的基于二维材料的忆阻器器件存在柔韧性和透明度差的问题，这阻碍了忆阻器在柔性电子器件中的应用。在此，通过一种便捷且节能的溶液处理技术制备了基于TiO/Ti C T薄膜的柔性人工突触阵列，该阵列实现了高透射率（约90%）和抗氧化性（>30天）。TiO/Ti C T忆阻器表现出低器件间变异性、长记忆保持和耐久性、高开关比以及基本的突触行为。此外，TiO/Ti C T忆阻器实现了令人满意的柔韧性（曲率半径R = 1.0毫米）和机械耐久性（10次弯曲循环），优于通过化学气相沉积制备的其他薄膜忆阻器。此外，高精度（>96.44%）的MNIST手写数字识别分类模拟表明，TiO/Ti C T人工突触阵列在未来神经形态计算应用中具有潜力，并为新型柔性智能电子设备提供了出色的高密度神经元电路。
