Tang Baoshan, Veluri Hasita, Li Yida, Yu Zhi Gen, Waqar Moaz, Leong Jin Feng, Sivan Maheswari, Zamburg Evgeny, Zhang Yong-Wei, Wang John, Thean Aaron V-Y
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
Institute of High Performance Computing, Singapore, 138632, Singapore.
Nat Commun. 2022 Jun 1;13(1):3037. doi: 10.1038/s41467-022-30519-w.
Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS memristor arrays are reported. The MoS memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.
基于二维半导体实现高密度且可靠的电阻式随机存取存储器对于其在下一代信息存储和神经形态计算中的发展至关重要。在此，报道了溶液处理的二维MoS忆阻器阵列的晶圆级集成。MoS忆阻器具有出色的耐久性、长数据保持时间、低器件变化以及具有线性电导更新特性的高模拟开/关比。二维纳米片似乎通过片间硫空位扩散实现了一种独特的调制开关特性的方式，这可以通过片尺寸分布来控制。此外，MNIST手写数字识别表明MoS忆阻器能够以大于98.02%的高精度运行，这证明了其在未来模拟存储器应用中的可行性。最后，通过堆叠二维MoS层展示了一个单片三维存储立方体，为将两个忆阻器集成到高密度神经形态计算系统中铺平了道路。
