Hou Zhongxuan, Zhang Yongkang, Si Chaowei, Han Guowei, Zhao Yongmei, Lu Xiaorui, Liu Jiahui, Ning Jin, Wei Tongbo
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2023 May 23;14(6):1098. doi: 10.3390/mi14061098.
This paper presents a new metal-contact RF MEMS switch based on an Al-Sc alloy. The use of an Al-Sc alloy is intended to replace the traditional Au-Au contact, which can greatly improve the hardness of the contact, and thus improve the reliability of the switch. The multi-layer stack structure is adopted to achieve the low switch line resistance and hard contact surface. The polyimide sacrificial layer process is developed and optimized, and the RF switches are fabricated and tested for pull-in voltage, S-parameters, and switching time. The switch shows high isolation of more than 24 dB and a low insertion loss of less than 0.9 dB in the frequency range of 0.1-6 GHz.
本文介绍了一种基于铝钪合金的新型金属接触射频微机电系统(RF MEMS)开关。使用铝钪合金旨在取代传统的金-金接触,这可以大大提高接触的硬度,从而提高开关的可靠性。采用多层堆叠结构以实现低开关线路电阻和坚硬的接触表面。开发并优化了聚酰亚胺牺牲层工艺,并制造了射频开关并测试了其吸合电压、S 参数和开关时间。该开关在0.1-6 GHz频率范围内显示出超过24 dB的高隔离度和小于0.9 dB的低插入损耗。