Ham Jiwoong, Kim Hyeong-U, Jeon Nari
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 34103, Republic of Korea.
Polymers (Basel). 2023 Jun 8;15(12):2616. doi: 10.3390/polym15122616.
Sequential infiltration synthesis (SIS) is an emerging vapor-phase synthetic route for the preparation of organic-inorganic composites. Previously, we investigated the potential of polyaniline (PANI)-InO composite thin films prepared using SIS for application in electrochemical energy storage. In this study, we investigated the effects of the number of InO SIS cycles on the chemical and electrochemical properties of PANI-InO thin films via combined characterization using X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, and cyclic voltammetry. The area-specific capacitance values of PANI-InO samples prepared with 10, 20, 50, and 100 SIS cycles were 1.1, 0.8, 1.4, and 0.96 mF/cm², respectively. Our result shows that the formation of an enlarged PANI-InO mixed region directly exposed to the electrolyte is key to enhancing the pseudocapacitive properties of the composite films.
顺序浸润合成法（SIS）是一种新兴的用于制备有机-无机复合材料的气相合成路线。此前，我们研究了使用SIS制备的聚苯胺（PANI）-InO复合薄膜在电化学储能中的应用潜力。在本研究中，我们通过结合X射线光电子能谱、紫外-可见光谱、拉曼光谱、傅里叶变换红外光谱和循环伏安法等表征手段，研究了InO SIS循环次数对PANI-InO薄膜化学和电化学性质的影响。经10、20、50和100次SIS循环制备的PANI-InO样品的比电容值分别为1.1、0.8、1.4和0.96 mF/cm²。我们的结果表明，形成直接暴露于电解质的扩大的PANI-InO混合区域是增强复合薄膜赝电容性能的关键。
