Jin Xiaoshi, Yuan Xiangyu, Zhang Shouqiang, Li Mengmeng, Liu Xi
School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.
ACS Omega. 2023 Jun 9;8(25):23120-23129. doi: 10.1021/acsomega.3c02541. eCollection 2023 Jun 27.
A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation. The drain electrode of the CDS-RSD is not only the output terminal of the current signal but also the input terminal of the voltage signal. Therefore, it is a reconfigurable diode based on high Schottky barriers for both the conduction band and valence band of silicon, which formed on the interface between the silicon and drain electrode. Therefore, the CDS-RSD can be regarded as the simplification of the reconfigurable field effect transistor structure on the premise of retaining the reconfigurable function. The simplified CDS-RSD is more suitable for the improvement of logic gate circuit integration. A brief manufacture process is also proposed. The device performance has been verified through device simulation. The performance of the CDS-RSD as a single-device two-input equivalence logic gate has also been investigated.
首次提出了一种基于互补掺杂源的可重构肖特基二极管（CDS-RSD）。与其他具有相同材料的源极和漏极（S/D）区域的可重构器件不同，该器件具有互补掺杂源极区域以及金属硅化物漏极区域。与具有编程栅极和控制栅极的三端可重构晶体管相比，所提出的CDS-RSD没有控制栅极，仅具有用于重构操作的编程栅极。CDS-RSD的漏极不仅是电流信号的输出端，也是电压信号的输入端。因此，它是一种基于硅导带和价带高肖特基势垒的可重构二极管，该势垒形成于硅与漏极电极之间的界面上。因此，CDS-RSD可以看作是在保留可重构功能的前提下对可重构场效应晶体管结构的简化。简化后的CDS-RSD更适合于逻辑门电路集成的改进。还提出了一个简要的制造工艺。通过器件模拟验证了器件性能。还研究了CDS-RSD作为单器件双输入等效逻辑门的性能。
