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205K 下的长波红外横向光电导位置灵敏 HgCdTe 探测器。

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K.

机构信息

Institute of Applied Physics, Military University of Technology, 00-908 Warsaw, Poland.

VIGO Photonics S.A., 05-850 Ozarow Mazowiecki, Poland.

出版信息

Sensors (Basel). 2023 May 19;23(10):4915. doi: 10.3390/s23104915.

DOI:10.3390/s23104915
PMID:37430828
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10223494/
Abstract

We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors' knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive area of 1 × 1 mm, operating at 205 K in the 3-11 µm spectral range, capable of achieving a position resolution of 0.3-0.6 µm using 10.5 µm 2.6 mW radiation focused on a spot of the 1/e diameter 240 µm, with a box-car integration time of 1 µs and correlated double sampling.

摘要

我们详细描述了一种基于横向效应的珀耳帖冷却长波长红外（LWIR）位置敏感探测器（PSD）的构建和特性。该器件是最近才首次被报道的，据作者所知。它是一种改进的 PIN HgCdTe 光电二极管，形成了四四方方的 PSD，具有 1×1mm 的光敏面积，在 3-11µm 光谱范围内工作于 205K，使用 10.5µm、2.6mW 的辐射聚焦在 1/e 直径为 240µm 的光斑上，可实现 0.3-0.6µm 的位置分辨率，积分时间为 1µs，采用相关双采样。

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