Hu Yue, Wen Xinglin, Lin Jiamin, Yao Wendian, Chen Yingying, Li Junze, Chen Sijie, Wang Lei, Xu Weigao, Li Dehui
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Nano Lett. 2023 Jul 26;23(14):6581-6587. doi: 10.1021/acs.nanolett.3c01698. Epub 2023 Jul 13.
Although selective singlet and triplet interlayer exciton (IX) emission of transition metal dichalcogenides (TMD) heterostructures can be achieved by applying an electric or magnetic field, the device structure is complex and a low temperature is usually required. Here, we demonstrate a simple all-optical approach to selectively enhance the emission of singlet and triplet IX by selectively coupling singlet or triplet IX of a WS/WSe heterostructure to a SiO microsphere cavity. Angle-resolved photoluminescene reveals that the transition dipole of triplet IX is almost along the out-of-plane direction, while singlet IX only has 69% out-of-plane dipole moment contribution. Since the out-of-plane dipole presents a higher Purcell factor within the cavity, we can simultaneously enhance the emission intensity of IX and control the emissive IX species at room temperature in an all-optical route. Importantly, we demonstrate an all-optical valley polarization switch with a record high on/off ratio of 35.
尽管通过施加电场或磁场可以实现过渡金属二硫属化物(TMD)异质结构的选择性单重态和三重态层间激子(IX)发射,但器件结构复杂且通常需要低温。在此,我们展示了一种简单的全光学方法,通过将WS/WSe异质结构的单重态或三重态IX选择性地耦合到SiO微球腔中,来选择性增强单重态和三重态IX的发射。角分辨光致发光表明,三重态IX的跃迁偶极矩几乎沿面外方向,而单重态IX的面外偶极矩贡献仅为69%。由于面外偶极矩在腔内呈现更高的珀塞尔因子,我们可以在室温下通过全光学途径同时增强IX的发射强度并控制发射的IX种类。重要的是,我们展示了一种全光学谷极化开关,其开/关比高达35,创历史新高。