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异质结构中与扭曲角相关的谷极化切换

Twist angle-dependent valley polarization switching in heterostructures.

作者信息

Dai Danjie, Fu Bowen, Yang Jingnan, Yang Longlong, Yan Sai, Chen Xiqing, Li Hancong, Zuo Zhanchun, Wang Can, Jin Kuijuan, Gong Qihuang, Xu Xiulai

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Sci Adv. 2024 May 17;10(20):eado1281. doi: 10.1126/sciadv.ado1281. Epub 2024 May 15.

Abstract

The twist engineering of moiré superlattice in van der Waals heterostructures of transition metal dichalcogenides can manipulate valley physics of interlayer excitons (IXs), paving the way for next-generation valleytronic devices. However, the twist angle-dependent control of excitonic potential on valley polarization is not investigated so far in electrically controlled heterostructures and the physical mechanism underneath needs to be explored. Here, we demonstrate the dependence of both polarization switching and degree of valley polarization on the moiré period. We also find the mechanisms to reveal the modulation of twist angle on the exciton potential and the electron-hole exchange interaction, which elucidate the experimentally observed twist angle-dependent valley polarization of IXs. Furthermore, we realize the valley-addressable devices based on polarization switch. Our work demonstrates the manipulation of the valley polarization of IXs by tunning twist angle in electrically controlled heterostructures, which opens an avenue for electrically controlling the valley degrees of freedom in twistronic devices.

摘要

过渡金属二硫属化物范德华异质结构中莫尔超晶格的扭转工程可以操控层间激子(IXs)的能谷物理,为下一代谷电子学器件铺平了道路。然而,到目前为止,在电控异质结构中尚未研究激子势对谷极化的扭转角依赖性控制,其背后的物理机制有待探索。在此,我们展示了极化切换和谷极化程度对莫尔周期的依赖性。我们还发现了揭示扭转角对激子势和电子 - 空穴交换相互作用调制的机制,这阐明了实验观察到的IXs的扭转角依赖性谷极化。此外,我们基于极化开关实现了谷可寻址器件。我们的工作展示了通过在电控异质结构中调节扭转角来操控IXs的谷极化,这为在扭转电子器件中电控谷自由度开辟了一条途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d1aa/11095485/a19cc3eb268c/sciadv.ado1281-f1.jpg

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