Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China.
Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China.
Sensors (Basel). 2023 Jul 5;23(13):6159. doi: 10.3390/s23136159.
Effects of hot pixels on pixel performance in light and dark environments have been investigated in pinned photodiode 0.18 μm backside illuminated CMOS image sensors irradiated by 10 MeV protons. After exposure to protons, hot pixels and normal pixels are selected from the whole pixel array, and their influences on key parameters are analyzed. Experimental results show that radiation-induced hot pixels have a significant impact on pixel performance in dark environments, such as dark signal nonuniformity, long integration time, and random telegraph signal. Hot pixels are caused by defects with complex structures, i.e., cluster defects. Furthermore, the dark current activation energy result confirms that the defects causing the hot pixels have defect energy levels close to mid-gap.
已研究了在经受 10MeV 质子辐照的 0.18μm 背照式 pinned 光电二极管 CMOS 图像传感器中，亮、暗环境下的热像素对像素性能的影响。在质子辐照后，从整个像素阵列中选择热像素和正常像素，并分析它们对关键参数的影响。实验结果表明，辐照产生的热像素会显著影响暗环境下的像素性能，如暗信号不均匀性、长积分时间和随机电报信号。热像素是由具有复杂结构的缺陷，即团簇缺陷引起的。此外，暗电流激活能的结果证实，导致热像素的缺陷具有接近带隙中间的缺陷能级。
